Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S A Lisitsyn"'
Publikováno v:
Russian Microelectronics. 48:72-79
The regimes of submicron and nanosized profiling of the KDB-10 Si(100) wafer surface by the focused ion beam (FIB) technique are experimentally investigated. It is established that with an increase in the ion beam current from 1 to 300 pA, the diamet
Autor:
S. A. Lisitsyn, V. S. Klimin, M. S. Solodovnik, S. V. Balakirev, Boris G. Konoplev, V. I. Avilov, Oleg A. Ageev, A. S. Kolomiytsev
Publikováno v:
Nanotechnologies in Russia. 13:26-33
The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion current and single FIB exposure time on the geometric characteristics of the forming nanosized
Autor:
Al. V. Bykov, Oleg A. Ageev, A. S. Kolomiytsev, S. A. Lisitsyn, Boris G. Konoplev, M. V. Il’ina, O. I. Il’in
Publikováno v:
Russian Microelectronics. 46:468-473
The results of experimental studies of the Pt structure with the thickness ranging from (0.48 ± 0.1) to (24.38 ± 0.1) nm ion beam including deposition by focused ion beam are presented. The rate of ion beam including deposition of Pt, which dependi
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
Autor:
S. V. Lisitsyn, M. Yu. Shevchenko, V.A. Tarala, D. P. Valyukhov, V. Ya. Martens, A. S. Altakhov
Publikováno v:
Inorganic Materials. 51:728-735
Aluminum nitride films have been grown by plasma-enhanced atomic layer deposition under self-limiting growth and CVD-like conditions. The films have been characterized by IR spectroscopy, ellipsometry, and Auger exposure spectroscopy. We have examine
Autor:
S. A. Lisitsyn, Alexei S. Kolomiytsev, Vladimir A. Smirnov, Oleg A. Ageev, E. G. Zamburg, O. I. Il’in
Publikováno v:
Applied Mechanics and Materials. :154-158
This paper presents results of the formation of high aspect nanostructures by local deposition of carbon, stimulated by focused ion beam (FIB). The structures used in the modification of the probe sensors were cantilevers for atomic force microscopy
Autor:
S. A. Lisitsyn, A. S. Kolomiytsev, O. I. Il’in, A. V. Vnukova, Boris G. Konoplev, A. L. Gromov, Oleg A. Ageev
Publikováno v:
Nanotechnologies in Russia. 9:145-150
In this work the results obtained in experimental studies of conditions of the nanoscale profiling of a silicon substrate surface under the ion stimulation of W and Pt deposition by a Ga+ ion beam are represented. It is shown that, according to combi
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 699:012042
The results of an experimental study of the fabrication of high aspect probe tips for atomic force microscopy (AFM) and critical dimension AFM (CD AFM) using the focused ion beam (FIB) milling and ion beam induced deposition of carbon are presented.
Publikováno v:
Journal of Physics: Conference Series. 1400:044005
This paper presents the results of experimental studies of the influence of the technological parameters of a focused ion beam (FIB) on the process of local ion-stimulated deposition of carbon and tungsten when creating elements of vacuum nanoelectro
Autor:
A. S. Kolomiytsev, A. V. Vnukova, Alexander Alekseev, A. L. Gromov, Boris G. Konoplev, S. A. Lisitsyn, Oleg A. Ageev
Publikováno v:
Nanotechnologies in Russia. 9:26-30
The results of experimental studies of the resolving power and accuracy of nanosized profiling using focused ion beams (FIBs) are presented. Dependences of the resolving power on the ion beam current were obtained for the boron-doped (10 ohm cm (100)