Zobrazeno 1 - 7
of 7
pro vyhledávání: '"S A Kadinskaya"'
Autor:
A. A. Vasiliev, V. Yu. Davydov, K. Yu. Shubina, A. V. Babichev, Ivan Mukhin, S. A. Kadinskaya, I. A. Eliseyev, A. Yu. Egorov, Eduard Moiseev, Sergey A. Blokhin, A. A. Blokhin, N. V. Kryzhanovskaya, Pavel N. Brunkov
Publikováno v:
Semiconductors. 54:991-998
The results of experiments aimed at fabricating and studying the properties of photodetector structures based on single-layer graphene produced by chemical vapor deposition are presented. The configuration of a Ta2O5 vertical microcavity with a reson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3500366eeb854b6347cd0828bbc6534d
https://doi.org/10.1134/s1063782620090031
https://doi.org/10.1134/s1063782620090031
Autor:
S. A. Kadinskaya, N. V. Kryzhanovskaya, Anna S. Dragunova, F. I. Zubov, Eduard Moiseev, A. M. Nadtochii, Alexey M. Mozharov, M. M. Kulagina, Mikhail V. Maximov, O. I. Simchuk, Alexey E. Zhukov
Publikováno v:
Technical Physics Letters. 46:783-786
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots have been transferred to the surface of a silicon wafer using an indium solder. The microlasers have a common electric contact deposited on top of the residual n+-GaAs substrate and individua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c65e6e84db7e1751159c19761fb9a5f
https://doi.org/10.1134/s1063785020080295
https://doi.org/10.1134/s1063785020080295
Autor:
N. V. Kryzhanovskaya, Mircea Guina, M. M. Kulagina, A. E. Zhukov, O. I. Simchuk, S. A. Kadinskaya, Mikhail V. Maximov, Eduard Moiseev
Publikováno v:
Semiconductors. 54:263-267
The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9d99ab3c7354f823e9df4405ea63060
https://doi.org/10.1134/s1063782620020177
https://doi.org/10.1134/s1063782620020177
Autor:
K Aubekerov, K N Punegova, R Sergeenko, A Kuznetsov, V M Kondratev, S A Kadinskaya, S S Nalimova, V A Moshnikov
Publikováno v:
Journal of Physics: Conference Series. 2227:012014
Currently, new nanostructured materials based on composite metal oxides is of great interest for the development of gas sensors with improved functional characteristics. In this work, zinc oxide nanowires were synthesized by hydrothermal method. Hier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d751155388080327976246c90ce66c58
https://doi.org/10.1088/1742-6596/2227/1/012014
https://doi.org/10.1088/1742-6596/2227/1/012014
Autor:
S A Kadinskaya, V M Kondratev, I K Kindyushov, M E Labzovskaya, B V Novikov, I V Shtrom, A I Lihachev, A V Nashchekin, A D Bolshakov
Publikováno v:
Journal of Physics: Conference Series. 2227:012007
In this work we study zinc oxide nanostructures of various geometries synthesized via the hydrothermal technique on Si (111) substrate. We demonstrate capabilities of the growth protocol for control over the morphology of nanostructures varying from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075e26be2a056f7ec01a7e63f43ac58b
https://doi.org/10.1088/1742-6596/2227/1/012007
https://doi.org/10.1088/1742-6596/2227/1/012007
Autor:
N V Kryzhanovskaya, E I Moiseev, A E Zhukov, F I Zubov, N A Kalyuzhnyy, S A Mintairov, Yu A Guseva, V G Tikhomirov, M M Kulagina, S A Kadinskaya, A Yu Vinogradov, M V Maximov
Publikováno v:
Journal of Physics: Conference Series. 1695:012096
We present an analysis of spectral and threshold characteristics of InGaAs/GaAs quantum well-dot microdisk laser operated under cw current injection at room temperature without external cooling. The experimental values of the threshold current for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed7a33a8329e5691fa2bb61ad1ac55e1
https://doi.org/10.1088/1742-6596/1695/1/012096
https://doi.org/10.1088/1742-6596/1695/1/012096
Autor:
N. A. Kalyuzhnyi, S. A. Kadinskaya, Eduard Moiseev, M. M. Kulagina, S. A. Mintairov, Alexey E. Zhukov, M. V. Maximov, N. A. Fominykh, F. I. Zubov, N. V. Kryzhanovskaya
Publikováno v:
Journal of Physics: Conference Series. 1695:012094
We studied a far-field emission pattern for microlasers with InGaAs/GaAs quantum well-dots in the active region. Angular-resolved electroluminescence spectra measurement revealed various far-field patterns depending on current and resonance mode.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e042447de1302a16194850d723283913
https://doi.org/10.1088/1742-6596/1695/1/012094
https://doi.org/10.1088/1742-6596/1695/1/012094