Zobrazeno 1 - 10
of 148
pro vyhledávání: '"S A, Gordienko"'
Publikováno v:
PROBLEMS OF UNINTERRUPTED MEDICAL TRAINING AND SCIENCE. 42:43-48
Necessary to take into account the effect of occlusal and non-axial loading in orthopedic treatment and rehabilitation of patients with edentulous jaws with implant-supported structures. Immediate stabilization, which achieved by intraoral welding, i
Autor:
S. N. Gordienko, S. S. Moiseev
Publikováno v:
Nonlinear Processes in Geophysics, Vol 8, Iss 4/5, Pp 197-200 (2001)
As the finite correlation time of a force driving turbulence is taken into account, a new, dimensionless parameter occurs in the theory of turbulence. This new parameter is responsible for two different mechanisms of formation of anomalous spectra. T
Externí odkaz:
https://doaj.org/article/8d580479ec854ceba4a750ccabd8f723
Publikováno v:
RADIO COMMUNICATION TECHNOLOGY. :85-96
Publikováno v:
RADIO COMMUNICATION TECHNOLOGY. :91-100
Autor:
O. O. Puchkov, S. V. Gordienko
Publikováno v:
Law and Society. :115
Autor:
S. O. Gordienko, A.V. Rusavsky, V.S. Lysenko, A. A. Stadnik, Alexei Nazarov, T.M. Nazarova, Y. Y. Gomeniuk, Petro M. Lytvyn, A. V. Vasin
Publikováno v:
Advanced Materials Research. 854:59-67
The paper describes emission properties of a new nanostructured material carbon-rich amorphous silicon carbide (a-SiC) deposited on silicon wafer. Proposed material technology demonstrates that the field enhancement factor of the electron emission of
Autor:
Vladimir Popov, S. O. Gordienko, V. S. Lysenko, A. V. Vasin, Andrii Nikolenko, Alexei Nazarov, P. M. Lytvyn, Viktor Strelchuk, A.V. Rusavsky
Publikováno v:
physica status solidi c. 10:1172-1175
This paper considers a synthesis of graphene flakes on the Ni surface by vacuum thermal treatment of the “sandwich” a-SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. Lateral size of graphene flake is estimated to b
Publikováno v:
physica status solidi c. 9:1477-1480
This paper considers the influence of low temperature oxidation on structural and electrical properties of amorphous carbon-rich a -Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering. It is shown that oxidation leads to formation of
Autor:
V. S. Lysenko, A.V. Rusavsky, Yuri V. Gomeniuk, Alexei Nazarov, S. O. Gordienko, S. Ashok, A. V. Vasin, D.B. Ballutaud, V. G. Stepanov
Publikováno v:
Journal of Non-Crystalline Solids. 358:168-173
The processes of charge transport and trapping in amorphous Si 1 − x C x :H films deposited on crystalline p -type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage ( I – V ), capacitan
Autor:
A. V. Vasin, A.V. Rusavsky, T.M. Nazarova, S. O. Gordienko, V. G. Stepanov, N. Rymarenko, Alexey Nazarov, V. S. Lysenko
Publikováno v:
Advanced Materials Research. 276:21-25
This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It i