Zobrazeno 1 - 10
of 620
pro vyhledávání: '"Sęk G"'
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined o
Externí odkaz:
http://arxiv.org/abs/2208.14676
Publikováno v:
Phys. Rev. B 100, 241304(R) (2019)
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we direct
Externí odkaz:
http://arxiv.org/abs/2106.14695
Autor:
Musiał, A., Mikulicz, M., Mrowiński, P., Zielińska, A., Sitarek, P., Wyborski, P., Kuniej, M., Reithmaier, J. P., Sęk, G., Benyoucef, M.
In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton event
Externí odkaz:
http://arxiv.org/abs/2102.00450
Autor:
Serafińczuk, J., Rudno-Rudziński, W., Gawełczyk, M., Podemski, P., Parzyszek, K., Piejko, A., Sichkovskyi, V., Reithmaier, J.P., Sęk, G.
Publikováno v:
In Measurement 15 November 2023 221
Autor:
Syperek, M., Dusanowski, Ł., Gawełczyk, M., Sęk, G., Somers, A., Reithmaier, J. P., Höfling, S., Misiewicz, J.
Publikováno v:
Appl. Phys. Lett. 109, 193108 (2016)
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 {\mu}m are investigated by means of polarization- and time-resolved photoluminescence, as well as photol
Externí odkaz:
http://arxiv.org/abs/1807.09143
Publikováno v:
Appl. Phys. Lett. 113, 043103 (2018)
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results
Externí odkaz:
http://arxiv.org/abs/1807.02836
Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
Autor:
Gawełczyk, M., Syperek, M., Maryński, A., Mrowiński, P., Dusanowski, Ł., Gawarecki, K., Misiewicz, J., Somers, A., Reithmaier, J. P., Höfling, S., Sęk, G.
Publikováno v:
Phys. Rev. B 96, 245425 (2017)
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them
Externí odkaz:
http://arxiv.org/abs/1709.07323
Autor:
Lundt, N., Maryński, A., Cherotchenko, E., Pant, A., Fan, X., Sęk, G., Tongay, S., Kavokin, A. V., Höfling, S., Schneider, C.
Publikováno v:
2D Materials, 2016, 4 015006
Monolayered MoSe2 is a promising new material to investigate advanced light-matter coupling as it hosts stable and robust excitons with comparably narrow optical resonances. In this work, we investigate the evolution of the lowest lying excitonic tra
Externí odkaz:
http://arxiv.org/abs/1603.05562
Autor:
Gluba, L., Yastrubchak, O., Sek, G., Rudno-Rudziński, W., Sadowski, J., Kulik, M., Rzodkiewicz, W., Rawski, M., Andrearczyk, T., Wosinski, T., Żuk, J.
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence ban
Externí odkaz:
http://arxiv.org/abs/1312.3930