Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Sørensen, C. B."'
Publikováno v:
Nanotechnology 28, 134005 (2017)
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole sys
Externí odkaz:
http://arxiv.org/abs/1704.03957
We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime. Under proper conditions, the current develops plateaus at integer multiples of ef when th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611240
Publikováno v:
Acta Phys. Pol. A 110, 403-408 (2006)
We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage chara
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611203
Autor:
Kubisa, M., Bryja, L., Ryczko, K., Misiewicz, J., Bardot, C., Potemski, M., Ortner, G., Bayer, M., Forchel, A., Sorensen, C. B.
We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing bo
Externí odkaz:
http://arxiv.org/abs/cond-mat/0211594
We have experimentally investigated the magnetisation of a mesoscopic aluminum loop at temperatures well below the superconducting transition temperature $T_{c}$. The flux quantisation of the superconducting loop was investigated with a $\mu$-Hall ma
Externí odkaz:
http://arxiv.org/abs/cond-mat/0107220
We study electron decoherence by measuring the temperature dependence of Aharonov-Bohm (AB) oscillations in quasi-1D rings, etched in a high-mobility GaAs/GaAlAs heterostructure. The oscillation amplitude is influenced both by phase-breaking and by t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0102096
Autor:
Kristensen, A., Bruus, H., Hansen, A. E., Jensen, J. B., Lindelof, P. E., Marckmann, C. J., Nygard, J., Sorensen, C. B., Beuscher, F., Forchel, A., Michel, M.
Publikováno v:
Phys. Rev. B 62, 10950 - 10957 (2000)
The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigat
Externí odkaz:
http://arxiv.org/abs/cond-mat/0005082
We have investigated the Aharonov-Bohm effect in mesoscopic semiconductor GaAs/GaAlAs rings in low magnetic fields. The oscillatory magnetoconductance of these systems is systematically studied as a function of electron density. We observe phase-shif
Externí odkaz:
http://arxiv.org/abs/cond-mat/9909246
Autor:
Pedersen, S., Sorensen, C. B., Kristensen, A., Lindelof, P. E., Golub, L. E., Averkiev, N. S.
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible
Externí odkaz:
http://arxiv.org/abs/cond-mat/9905057
Autor:
Kristensen, A., Bruus, H., Forchel, A., Jensen, J. B., Lindelof, P. E., Michel, M., Nygard, J., Sorensen, C. B.
The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior a
Externí odkaz:
http://arxiv.org/abs/cond-mat/9808007