Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Sören Jeppesen"'
Autor:
Sören Jeppesen, Hongqi Xu, Hiroshi Kamata, Yuusuke Takeshige, Yosuke Sato, Lars Samuelson, Sadashige Matsuo, Seigo Tarucha, Shoji Baba, Kan Li, Kento Ueda
Publikováno v:
Science Advances
We demonstrated dominant Cooper pair splitting in a ballistic double nanowire Josephson junction.
Cooper pair splitting (CPS) can induce nonlocal correlation between two normal conductors that are coupled to a superconductor. CPS in a double one
Cooper pair splitting (CPS) can induce nonlocal correlation between two normal conductors that are coupled to a superconductor. CPS in a double one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc7c6d39b277e560534ce96e1d744668
Autor:
Hiroshi Kamata, Koji Ishibashi, Hongqi Xu, Lars Samuelson, Russell S. Deacon, Sadashige Matsuo, Seigo Tarucha, Kan Li, Sören Jeppesen
We investigate the Josephson radiation of nanowire (NW)-based Josephson junctions in a parallel magnetic field. The Josephson junction made of an InAs NW with superconducting Al leads shows the emission spectra which follow the Josephson frequency $f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c26957c4bcd884da3c9cf347a7965b2
Autor:
Kan Li, Hongqi Xu, Yosuke Sato, Christian Jünger, Sadashige Matsuo, Seigo Tarucha, Shoji Baba, Lars Samuelson, Andreas Baumgartner, Christian Schönenberger, Sören Jeppesen, Hiroshi Kamata
We report on the fabrication and electrical characterization of an InAs double - nanowire (NW) device consisting of two closely placed parallel NWs coupled to a common superconducting electrode on one side and individual normal metal leads on the oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c42f1b35a67467fd4d504d25a74026a
Autor:
Sören Jeppesen, Knut Deppert, Lars Samuelson, B. Jonas Ohlsson, Brent A. Wacaser, Jakob Birkedal Wagner, Linus Fröberg
Publikováno v:
Nano Letters. 8:3815-3818
We present results on the effect of seed particle reconfiguration on the growth of short InAs and InP nanowire segments. The reconfiguration originates in two different steady state alloy compositions of the Au/In seed particle during growth of InAs
Autor:
Ann Persson, Jakob Birkedal Wagner, Mikael Björk, L. R. Wallenberg, Sören Jeppesen, Lars Samuelson
Publikováno v:
Nano Letters. 6:403-407
We present the growth of homogeneous InAs(1-x)P(x) nanowires as well as InAs(1-x)P(x) heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio,
Autor:
Andreas B. Dahlin, Lars Montelius, Fredrik Höök, Sören Jeppesen, Sara Ghatnekar-Nilsson, Thord Stjernholm, J Lindahl
Publikováno v:
Nanotechnology. 16:1512-1516
A liquid-cell-based cantilever sensor system operating in the dynamic mode has been developed and characterized, and the frequency spectra of commercial micrometre-scale silicon cantilevers in aqueous solutions have been studied. We report data demon
Publikováno v:
Journal of Crystal Growth. 272:167-174
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures on (I 1 1) B-oriented substrates in chemical beam epitaxy (CBE), to establish the mechanisms that govern wire growth and to optimize growth condition
Publikováno v:
Nano Letters. 4:1961-1964
We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and wid
Autor:
N. Panev, A. A. Katznelson, V. P. Evtikhiev, E. Yu. Kotel’nikov, Mats-Erik Pistol, Sören Jeppesen
Publikováno v:
Journal of Applied Physics. 92:7086-7089
We have observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs. The luminescence from a single quantum dot, exhibiting switching between two levels, has been spectrally resolved. The random telegraph
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:1013-1017
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge/Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 degreesC. A step-wise growth mode is applied, consistin