Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sébastien Jacqueline"'
Autor:
Vincent Georgel, Sophie Ledain, Karine Danilo, Matthieu Nongaillard, Christian Gautier, Sébastien Jacqueline
Publikováno v:
Microelectronics Reliability. 48:1258-1262
Because of its large dimension and its high level of integration, the PICS (Passive Integration Connecting Substrate) developed by NXP prone to top to bottom metal short (TBMS) failure during temperature cycling test. Several options of process modif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7f7ea1d03ee210c2e86dffdd50ce204
https://doi.org/10.1016/j.microrel.2008.07.033
https://doi.org/10.1016/j.microrel.2008.07.033
Autor:
Frederic Barbier, Sébastien Jacqueline
Publikováno v:
Microelectronics Reliability. 48:1422-1426
This work presents some results from electrical (TDDB, TLP, HBM and MM) measurements and ESD calculations/simulations on passive components such as capacitors. In a SIP context, the ESD sensitivity of innovative 3D capacitors is studied. A method to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e915b5eaae1770fe4f5054d7cc161d14
https://doi.org/10.1016/j.microrel.2008.07.023
https://doi.org/10.1016/j.microrel.2008.07.023
Publikováno v:
Semiconductor Science and Technology. 28:045018
In this paper, we present a study of conduction mechanisms observed in high performance SIS capacitors (semiconductor–insulator–semiconductor) fabricated on bulk silicon. The combination of high aspect ratio 3D patterns and thin dielectric layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f77d0dd31f8fe0706ad2b10684d72aeb
https://doi.org/10.1088/0268-1242/28/4/045018
https://doi.org/10.1088/0268-1242/28/4/045018