Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sébastien Frégonèse"'
Autor:
Sebastien Fregonese, Thomas Zimmer
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 3, Pp 381-388 (2024)
This work focuses on a novel methodology to establish on-wafer calibration standards for the 16-Term Error Calibration Technique. It combines TRL-calibrated data with EM simulation to precisely generate S-parameters of standards. Applied to the advan
Externí odkaz:
https://doaj.org/article/18f2b9c682a545bdb8be2cc639d84118
Autor:
Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquiere, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Disch, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick
Publikováno v:
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 288-298 (2021)
This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special adv
Externí odkaz:
https://doaj.org/article/3bc0679a9ae0498f94cba80626998dd3
Autor:
Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali De Matos, Thomas Zimmer
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1363-1372 (2020)
This article presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the on-wafer calibration
Externí odkaz:
https://doaj.org/article/14441e23f79a47f7ab52aad654f7d670
Autor:
Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, Sebastien Fregonese
Publikováno v:
Applied Sciences, Vol 10, Iss 6, p 2183 (2020)
This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar be
Externí odkaz:
https://doaj.org/article/b5468add1201497084ae26f368eed17d
Autor:
Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 1, Pp 49-53 (2015)
This paper presents the characterization of a GFET transistor using a source-pull/load-pull test set. The characterization shows that despite the good fT and fMAX, it is hard to achieve power gain using the GFET device within a circuit configuration.
Externí odkaz:
https://doaj.org/article/00d25edb1a6f41f1ad83ada7cd0f7c05
Autor:
Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Caroline Arnaud, Cristell Maneux, Thomas Zimmer
Publikováno v:
Active and Passive Electronic Components, Vol 2010 (2010)
This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant con
Externí odkaz:
https://doaj.org/article/0542eb1b1e1d46b79e4039aae09c9f3a
Autor:
J. Ajayan, Saurabh Chaudhury, Suprem R. Das, Prabhat Kumar Dubey, Rosario D’Esposito, Sébastien Frégonèse, Navdeep Goyal, Ravi S. Hegde, Rahul Kumar Jaiswal, Saumyakanti Khatua, R.K. Kotnala, Yaochuan Mei, Sachin Mishra, Sparsh Mittal, D. Nirmal, Nidhi Pandit, Nagendra Prasad Pathak, Shibnath Pathak, Bhargav Raval, Berardi Sensale-Rodriguez, Vaishali Shukla, Man Singh, Sanjeet Kumar Sinha, Kuldeep C. Verma, Xinbo Wang, Thomas Zimmer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc19935c7ce778e881e115ed1849d38
https://doi.org/10.1016/b978-0-12-813353-8.00045-2
https://doi.org/10.1016/b978-0-12-813353-8.00045-2
Autor:
Cabbia, Marco
Publikováno v:
Electronics. Université de Bordeaux, 2021. English. ⟨NNT : 2021BORD0017⟩
Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::59c39ca2f4189bf2b131195166a73569
https://tel.archives-ouvertes.fr/tel-03150165/file/CABBIA_MARCO_2021.pdf
https://tel.archives-ouvertes.fr/tel-03150165/file/CABBIA_MARCO_2021.pdf
Autor:
Cabbia, Marco
Publikováno v:
Electronics. Université de Bordeaux, 2021. English. ⟨NNT : 2021BORD0017⟩
Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::374a6cbd99b785cacbfc79711866c660
https://theses.hal.science/tel-03150165
https://theses.hal.science/tel-03150165