Curvilinear data processing methods and verification

Autor: Patrick Schiavone, Serguei Postnikov, Sébastien Bayle, Clyde Browning, Matthieu Milléquant

Publikováno v: Proc. SPIE
34th European Mask and Lithography Conference
34th European Mask and Lithography Conference, Jun 2018, Grenoble, France. pp.107750K, ⟨10.1117/12.2326599⟩

Designs for photonic devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles. Reticle Enhancement Techniques (RET) that are commonly used for CMOS manufacturing now are applied to curvilinear data patterns for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c9f5cf80f18ea8cd20919f6dff82c8
https://doi.org/10.1117/12.2326599

Data preparation in the age of curvilinear patterns

Autor: Thiago Figueiro, Sergei V. Postnikov, Sébastien Bayle, Patrick Schiavone, Matthieu Milléquant, Charles Tiphine, Luc Martin

Publikováno v: Proc. SPIE
Photomask Japan 2017
Photomask Japan 2017, Apr 2017, Yokohama, Japan. pp.104540H, ⟨10.1117/12.2280704⟩

The number of curvilinear patterns present on the masks will increase drastically in the next generations of semiconductor devices. Multibeam mask writers are foreseen to enable a more widespread use of curvilinear shapes. Several applications can be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::978b80d417cc61132d0bae55ed267061
https://hal.science/hal-02332389

Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

Autor: Jerome Belledent, Luc Martin, Sébastien Bayle, Pablo Wiedemann, Abdi Farah, Patrick Schiavone, S. Manakli, Sébastien Soulan

Publikováno v: Alternative Lithographic Technologies IV.

Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45ff9bcd2b86ea04db70ae371e7f4fe2
https://doi.org/10.1117/12.916064

Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

Autor: Sébastien Bayle, Jonathan Pradelles, S. Manakli, Luc Martin, J. Bustos, Kang-Hoon Choi, Manuela Gutsch

Publikováno v: Alternative Lithographic Technologies III.

Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15cc4443515beef4db411a5c88717547
https://doi.org/10.1117/12.879059

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Autor: Jerome Belledent, Marco Jan-Jaco Wieland, Stéfanie Meunier, B. Icard, Céline Tranquillin, Aurélien Fay, Pieter Brandt, Thiago Figueiro, Matthieu Milléquant, Sébastien Bayle

Publikováno v: Journal of Micro/Nanolithography, MEMS, and MOEMS. 13:031306

For proximity effect correction in 5 keV e-beam lithography, three elementary building blocks exist: dose modulation, geometry (size) modulation, and background dose addition. Combinations of these three methods are quantitatively compared in terms o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7fab861bf8ffdb9425d8d23c8ed95271
https://doi.org/10.1117/1.jmm.13.3.031306