Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Sébastien Barnola"'
Publikováno v:
Advanced Etch Technology for Nanopatterning IX
Advanced Etch Technology for Nanopatterning IX, Feb 2020, San Jose, United States. pp.30, ⟨10.1117/12.2549210⟩
Advanced Etch Technology for Nanopatterning IX, Feb 2020, San Jose, United States. pp.30, ⟨10.1117/12.2549210⟩
The integration of new materials in the next generation of optoelectronic devices leads to several challenges. For instance, the etching of indium tin oxide (ITO, In2O3:Sn) faces the issue of the low volatility of In- and Sn-based etch products at ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76bb539a0f17ae1ab3048a9fe056c028
https://hal.univ-grenoble-alpes.fr/hal-02912746
https://hal.univ-grenoble-alpes.fr/hal-02912746
Autor:
Raluca Tiron, Patricia Pimenta-Barros, Sébastien Barnola, Aurelien Sarrazin, Nicolas Posseme, Christophe Cardinaud
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2019, 37 (3), pp.030601. ⟨10.1116/1.5090395⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2019, 37 (3), pp.030601. ⟨10.1116/1.5090395⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2019, 37 (3), pp.030601. ⟨10.1116/1.5090395⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2019, 37 (3), pp.030601. ⟨10.1116/1.5090395⟩
Directed self-assembly of block copolymers is one of the most promising solutions to reach sub-20 nm patterns. A critical challenge of this technique is the PMMA removal selectively to polystyrene (PS). A very high PMMA:PS selectivity (>10:1) is requ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63ed25ac0e4d6339422f3a0241d89aac
https://hal.archives-ouvertes.fr/hal-02387281
https://hal.archives-ouvertes.fr/hal-02387281
Publikováno v:
Journal of Vacuum Science & Technology A. 38:063007
Spacer etching in 3D CMOS technologies has become a very challenging step to be able to complete the etching while preserving channel and shallow trench insulation materials. The formation of parasitic spacers along fin sidewalls requires a lengthy o
Autor:
Sébastien Barnola, Virginie Loup, Sana Rachidi, C. Vizioz, Jean-Michel Hartmann, Alain Campo, Nicolas Posseme
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033002
The fabrication of Si0.7Ge0.3 sub-10 nm nanochannels in gate-all-around devices requires a highly selective Si isotropic etching process. The etching of Si selectively to Si0.7Ge0.3 with CF4/N2/O2 downstream plasma has been investigated using various
Publikováno v:
Microelectronic Engineering. 228:111328
Full recess architecture for GaN based High Electron Mobility Transistor (HEMT) enables high mobility and high density of electrons to be conserved without compromising on voltage threshold. To obtain such architecture, standard RIE plasma etching pr
Autor:
Olivier Pollet, Francois Leverd, Nicolas Posseme, Maxime Garcia-Barros, Sébastien Barnola, Christian Arvet
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033004
Using CH3F/O2/He based chemistries in high density plasmas for silicon nitride spacer etching, loss of silicon in active source/drain regions of CMOS transistors can be observed. Minimizing the so-called silicon recess during nitride spacer etching i
Autor:
Sébastien Barnola, Yann Canvel, Christelle Boixaderas, Yann Mazel, Eugénie Martinez, Sébastien Lagrasta, K. Dabertrand
Publikováno v:
Microelectronic Engineering. 221:111183
An optimized Ge-rich GeSbTe (GST) ternary alloy is investigated to improve the thermal stability of future phase change memories (PCMs). The patterning process used for their manufacturing may change the GST surface chemical composition, thus damagin
Autor:
Olivier Pollet, G. Audoit, C. Guedj, Sébastien Barnola, Daniel Benoit, Maxime Garcia-Barros, Francois Leverd, Audrey Jannaud, Nicolas Posseme
Publikováno v:
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
International audience; Spacer etching realization is considered today as one of the most critical processes for the fully depleted silicon on insulator devices realization. The challenge arises from the fact that low-k spacer needs to be introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25bad278b7bb95f625fbfd1e6f332c7e
https://cea.hal.science/cea-02185184/document
https://cea.hal.science/cea-02185184/document
Autor:
Ahmed Gharbi, Sébastien Barnola, Maxime Argoud, Christophe Cardinaud, Patricia Pimenta-Barros, Nicolas Posseme, Raluca Tiron, Aurelien Sarrazin
Publikováno v:
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (4), ⟨10.1116/1.5034133⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (4), ⟨10.1116/1.5034133⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (4), ⟨10.1116/1.5034133⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (4), ⟨10.1116/1.5034133⟩
International audience; A critical challenge for directed self-assembly of block copolymers is the selectivity between the two polymer phases. Polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) is one of the most studied block-copolymers to reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5cee3cbafaf83aa047b325bace59e38
https://hal.archives-ouvertes.fr/hal-01860237/file/sarrazin2018.pdf
https://hal.archives-ouvertes.fr/hal-01860237/file/sarrazin2018.pdf
Autor:
V. Loup, G. Audoit, S. Reboh, R. Coquand, M. Vinet, M. Barlas, N. Rambal, S Barraud, A. Toffoli, E. Vianello, C. Jahan, V. Beugin, Vincent Delaye, O. Pollet, L. Brevard, C. Vizioz, O. Faynot, T. Dewolf, Nicolas Posseme, S. Chevalliez, N. Allouti, L. Perniola, Sébastien Barnola, B. Bouix, S. Bernasconi, C. Comboroure, Philippe Rodriguez, Yves Morand, C. Tallaron, L. Grenouillet
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.