Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Sébastien Bandiera"'
Autor:
Sébastien Bandiera, Bernard Dieny
Publikováno v:
Nanomagnetism: Applications and Perspectives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b4dabe5d3b04a4b0e41d5d4e8323e2
https://doi.org/10.1002/9783527698509.ch4
https://doi.org/10.1002/9783527698509.ch4
Autor:
Sébastien Bandiera, Bernard Dieny
Publikováno v:
Handbook of Spintronics ISBN: 9789400768918
Handbook of Spintronics ISBN: 9789400776043
Handbook of Spintronics ISBN: 9789400776043
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffede9fa53a5fafd705abb723d8d221d
https://doi.org/10.1007/978-94-007-6892-5_40
https://doi.org/10.1007/978-94-007-6892-5_40
Autor:
C. Creuzet, R. C. Sousa, C. Portemont, D. Lee, Sébastien Bandiera, B. Dieny, Quentin Stainer, K. Mackay, Lucien Lombard
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
Applied Physics Letters, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
Applied Physics Letters, American Institute of Physics, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
Applied Physics Letters, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
International audience; The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0802c312e8b15f958243e6e6bb914bf
https://hal.archives-ouvertes.fr/hal-02042683/document
https://hal.archives-ouvertes.fr/hal-02042683/document
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2014, 104 (16), ⟨10.1063/1.4872265⟩
Applied Physics Letters, American Institute of Physics, 2014, 104 (16), ⟨10.1063/1.4872265⟩
Applied Physics Letters, 2014, 104 (16), ⟨10.1063/1.4872265⟩
Applied Physics Letters, American Institute of Physics, 2014, 104 (16), ⟨10.1063/1.4872265⟩
Équipe 107 : Physique des plasmas chauds; International audience; The magnitude of exchange bias (H-ex) at room temperature can be significantly enhanced in IrMn/Co and (Pt(or Pd)/Co)/IrMn/Co structures thanks to the insertion of an ultrathin Cu dus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::266da4bfea87b4d8ff21bce0c628cc81
https://hal.science/hal-01286870
https://hal.science/hal-01286870
Autor:
M. Marins de Castro, Sébastien Bandiera, S. Auffret, R. C. Sousa, B. Dieny, L. San-Emeterio-Alvarez, I. L. Prejbeanu, Lavinia Elena Nistor, Ursula Ebels, B. Rodmacq, Laurent Vila, B. Lacoste, Clarisse Ducruet
Publikováno v:
International Semiconductor Conference Dresden-Grenoble.
This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integ
Autor:
Sébastien Bandiera, Bernard Dieny, Ricardo Sousa, Jean Pierre Nozieres, Ioan Lucian Prejbeanu, K. Mackay
Publikováno v:
2013 IEEE Faible Tension Faible Consommation.
On paper, MRAMs combine non volatility, high speed, moderate power consumption, infinite endurance and radiation hardness, all at low cost and easy to embed. Since its inception in the late 90's, however, and despite numerous promising announcements
Autor:
K. Mackay, I. L. Prejbeanu, R. C. Sousa, Sébastien Bandiera, Jérémy Alvarez-Hérault, Clarisse Ducruet, Quentin Stainer, Bernard Dieny, Y. Conraux, Lucien Lombard, J.-P Nozieres
Publikováno v:
NEWCAS
This paper describes the working principle of thermally assisted MRAM extending the downsize scalability of MRAM and introducing new functionalities particularly useful for security applications. Ultimately, STT switching assisted by thermally induce
Publikováno v:
Applied Physics Letters
Synthetic antiferromagnets are of great interest as reference layers in magnetic tunnel junctions since they allow decreasing the dipolar coupling between the two magnetic electrodes and exhibit larger pinning fields than single reference layers. In
Publikováno v:
Applied Physics Letters
This letter presents a study of perpendicular anisotropy in Co/Ni multilayers, which could constitute a thick polarizer in spin torque oscillators or a magnetic electrode in magnetic tunnel junctions (MTJ) with perpendicular anisotropy. Perfectly squ
Autor:
B. Dieny, Vincent Baltz, C. Portemont, Stéphane Auffret, Sébastien Bandiera, Y. Dahmane, Ioan Lucian Prejbeanu, Clarisse Ducruet, R. C. Sousa
Publikováno v:
IEEE Magnetics Letters
IEEE Magnetics Letters, IEEE, 2010, 1, pp.3000204-3000204. ⟨10.1109/LMAG.2010.2052238⟩
IEEE Magnetics Letters, 2010, 1, pp.3000204-3000204. ⟨10.1109/LMAG.2010.2052238⟩
IEEE Magnetics Letters, IEEE, 2010, 1, pp.3000204-3000204. ⟨10.1109/LMAG.2010.2052238⟩
IEEE Magnetics Letters, 2010, 1, pp.3000204-3000204. ⟨10.1109/LMAG.2010.2052238⟩
In magnetic tunnel junctions (MTJ), synthetic antiferromagnets (SAF) are usually used as reference layer to minimize dipolar interactions induced between this layer and the free layer (FL). We show here that the use of SAF allows us to reduce the asy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd7413df77514cf572fe1ad096d57c25
https://hal.archives-ouvertes.fr/hal-01683843
https://hal.archives-ouvertes.fr/hal-01683843