Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Sébastien, Duguay"'
Autor:
Edy Azrak, Zhaoguo Xue, Shuai Liu, Wanghua Chen, Celia Castro, Sébastien Duguay, Philippe Pareige, Linwei Yu, Pere Roca i Cabarrocas
Publikováno v:
Applied Surface Science. 618:156637
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5feff5ecc7677dd65116a8552adf7b30
https://doi.org/10.1016/j.apsusc.2023.156637
https://doi.org/10.1016/j.apsusc.2023.156637
Autor:
Bozhi Tian, Sébastien Duguay, Wanghua Chen, Zhen Zheng, Junyang An, Edy Azrak, Antonino Foti, Simona Moldovan, Philippe Pareige, Chantal Karam, Vishnu Nair, Jean-Luc Maurice, Pere Roca i Cabarrocas, Ruiling Gong
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth and Design
Crystal Growth and Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth & Design, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth and Design
Crystal Growth and Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
International audience; Because of their innocuity, Au nanowires present an interesting field of applications in biology and, particularly, in cancer therapy. Since their morphology and distribution can greatly affect their performances, being able t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e34b8e39f24e40583355571fd4a57bf
https://doi.org/10.1021/acs.cgd.0c00480
https://doi.org/10.1021/acs.cgd.0c00480
Autor:
Enrico Di Russo, Francesco Sgarbossa, Pierpaolo Ranieri, Gianluigi Maggioni, Samba Ndiaye, Sébastien Duguay, François Vurpillot, Lorenzo Rigutti, Jean-Luc Rouvière, Vittorio Morandi, Davide De Salvador, Enrico Napolitani
Publikováno v:
Applied Surface Science
Applied Surface Science, 2023, 612, pp.155817. ⟨10.1016/j.apsusc.2022.155817⟩
Applied Surface Science, 2023, 612, pp.155817. ⟨10.1016/j.apsusc.2022.155817⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0f45fe346ac5e9f1cc08d64a3c66e50
https://doi.org/10.1016/j.apsusc.2022.155817
https://doi.org/10.1016/j.apsusc.2022.155817
Publikováno v:
Microscopy and Microanalysis
Microscopy and Microanalysis, Cambridge University Press (CUP), 2021, pp.1-4. ⟨10.1017/S1431927621012800⟩
Microscopy and Microanalysis, 2022, 28, pp.994-997. ⟨10.1017/S1431927621012800⟩
Microscopy and Microanalysis, Cambridge University Press (CUP), 2021, pp.1-4. ⟨10.1017/S1431927621012800⟩
Microscopy and Microanalysis, 2022, 28, pp.994-997. ⟨10.1017/S1431927621012800⟩
Atom probe tomography was employed to observe and derive the composition of carbon clusters in implanted silicon. This value, which is of interest to the microelectronic industry when considering ion implantation defects, was estimated not to exceed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19073a3f423ee35abb738087b8c42eed
https://pubmed.ncbi.nlm.nih.gov/34544518
https://pubmed.ncbi.nlm.nih.gov/34544518
Autor:
Sébastien Duguay, Simona Moldovan, Pere Roca i Cabarrocas, Philippe Pareige, Wanghua Chen, Edy Azrak
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, 2019, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩
Journal of Physical Chemistry C, American Chemical Society, 2019, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩
Journal of Physical Chemistry C, 2019, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩
Journal of Physical Chemistry C, American Chemical Society, 2019, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩
We report on the growth of Sn-catalyzed GeSn nanowires (NWs) having a GeSn core and a c-Ge shell in the presence of germane plasma at substrate temperatures (TS) below the GeSn eutectic temperature (TE), containing an exceptional Sn concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abf750cdbbeb982b8a2496103c150887
https://doi.org/10.1021/acs.jpcc.9b10444
https://doi.org/10.1021/acs.jpcc.9b10444
Autor:
Pere Roca i Cabarrocas, Edy Azrak, Wanghua Chen, Celia Castro, Ruiling Gong, Philippe Pareige, Sébastien Duguay
Publikováno v:
Nanotechnology
Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Nanotechnology, Institute of Physics, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Nanotechnology, Institute of Physics, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64213c6d8ea9e416df26819450ee53b9
https://hal.science/hal-03249563
https://hal.science/hal-03249563
Autor:
Sébastien Duguay, Vincent Lu, Edwin Arevalo, F. Hilario, P.L. Julliard, Fabien Deprat, J. Borrel, P. Dumas, Wei Zou, W. Zhao, Didier Blavette
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩
Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩
Journal of Applied Physics, American Institute of Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩
Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩
Carbon has been co-implanted to phosphorus at low temperature (−100 °C) in silicon. As compared to a room temperature carbon implant, phosphorus activation is increased due to the suppression of extended defects. The unusual carbon depleted region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf2dbc6599b68f158bf92f9336823465
https://hal-normandie-univ.archives-ouvertes.fr/hal-03468001
https://hal-normandie-univ.archives-ouvertes.fr/hal-03468001
Autor:
Sébastien Duguay
Noir obscur présente des personnages noyés, liquéfiés, hachés, mis en boîte, écrasés, brûlés ou encore guillotinés. L'esthétique de l'œuvre de Sébastien Duguay (scénario) et Ghyslain Duguay (dessin) rappelle celle du film noir. Pourtan
Autor:
Ruiling, Gong, Edy, Azrak, Celia, Castro, Sébastien, Duguay, Philippe, Pareige, Pere, Roca I Cabarrocas, Wanghua, Chen
Publikováno v:
Nanotechnology. 32(34)
Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::02de8e32c22c66f98d3bd69422a63520
https://pubmed.ncbi.nlm.nih.gov/33910185
https://pubmed.ncbi.nlm.nih.gov/33910185
Publikováno v:
Ultramicroscopy
Ultramicroscopy, Elsevier, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩
Ultramicroscopy, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩
Ultramicroscopy, Elsevier, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩
Ultramicroscopy, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩
Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12C and 13C, the numerous molecular ions that were observed were identified and their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9d2ae8a51a31326fb590b9f0ec4574a
https://hal.archives-ouvertes.fr/hal-03249568
https://hal.archives-ouvertes.fr/hal-03249568