Zobrazeno 1 - 10
of 1 612
pro vyhledávání: '"S, Speck"'
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041108-041108-6 (2023)
We report the continuous Si doping in β-Ga2O3 epitaxial films grown by plasma-assisted molecular beam epitaxy through the use of a valved effusion cell for the Si source. Secondary ion mass spectroscopy results exhibit that the Si doping profiles in
Externí odkaz:
https://doaj.org/article/54c869bdfb52411cb7b4fc9349764c15
Autor:
Matthew S. Wong, Aditya Raj, Hsun-Ming Chang, Vincent Rienzi, Feng Wu, Jacob J. Ewing, Emily S. Trageser, Stephen Gee, Nathan C. Palmquist, Philip Chan, Ji Hun Kang, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015107-015107-5 (2023)
The electrical performances of III-nitride blue micro-light-emitting diodes (µLEDs) with different tunnel junction (TJ) epitaxial architectures grown by metalorganic chemical vapor deposition are investigated. A new TJ structure that employs AlGaN i
Externí odkaz:
https://doaj.org/article/ec2e47f313eb46dda386c0c0156ff6dc
Autor:
Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111104-111104-6 (2022)
We report on vertical β-Ga2O3 power diodes with oxidized-metal Schottky contact (PtOx) and high permittivity (high-κ) dielectric (ZrO2) field plate to improve reverse blocking at both Schottky contact surfaces and edges. The PtOx diodes showed exce
Externí odkaz:
https://doaj.org/article/9ae106488dbc4c0f879bf6357e46dd99
Publikováno v:
APL Materials, Vol 10, Iss 8, Pp 081107-081107-7 (2022)
We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (∼1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. T
Externí odkaz:
https://doaj.org/article/e4f2bb65309947edb05efd56e4a98fcb
Autor:
Kenny Huynh, Michael E. Liao, Akhil Mauze, Takeki Itoh, Xingxu Yan, James S. Speck, Xiaoqing Pan, Mark S. Goorsky
Publikováno v:
APL Materials, Vol 10, Iss 1, Pp 011110-011110-5 (2022)
An orientational dependence on the interfacial reaction between aluminum and (010), (001), and (2̄01) β-Ga2O3 substrates is addressed. Electron microscopy and x-ray diffraction were used to assess the interface crystallinity, thickness, and chemica
Externí odkaz:
https://doaj.org/article/1813687ca18d4a2e9f0ce232cdd3b8d3
Autor:
Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095119-095119-8 (2021)
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have
Externí odkaz:
https://doaj.org/article/8a4633fbfbce4d6396f32cc8b4bbeca5
Autor:
Jianfeng Wang, Kelsey Fast Jorgensen, Esmat Farzana, Kai Shek Qwah, Morteza Monavarian, Zachary J. Biegler, Thomas Mates, James S. Speck
Publikováno v:
APL Materials, Vol 9, Iss 8, Pp 081118-081118-7 (2021)
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, and plasma power, were investigated on different
Externí odkaz:
https://doaj.org/article/d3f98287f0934bcaaa6f5aa57b468d08
Autor:
Jacob Ewing, Cheyenne Lynsky, Jiaao Zhang, Pavel Shapturenka, Matthew Wong, Jordan Smith, Michael Iza, James S. Speck, Stephen P. DenBaars
Publikováno v:
Crystals, Vol 12, Iss 9, p 1216 (2022)
Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LE
Externí odkaz:
https://doaj.org/article/eb73ad91fa2343e8863bd765b2988c89
Autor:
Erin P. Vaughan, Julianne S. Speck, Paul J. Frick, Toni M. Walker, Emily L. Robertson, James V. Ray, Tina D. Wall Myers, Laura C. Thornton, Laurence Steinberg, Elizabeth Cauffman
Publikováno v:
Development and Psychopathology. :1-9
Research on proactive and reactive aggression has identified covariates unique to each function of aggression, but hypothesized correlates have often not been tested with consideration of developmental changes in or the overlap between the types of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc640779035096b90b503c3f9c126a2c
https://doi.org/10.1017/s0954579423000317
https://doi.org/10.1017/s0954579423000317
Autor:
R. M. Cadena, D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:363-369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340eef344cbfa124dcf134df85554130
https://doi.org/10.1109/tns.2023.3237979
https://doi.org/10.1109/tns.2023.3237979