Zobrazeno 1 - 10
of 53
pro vyhledávání: '"S, Shirotori"'
Autor:
Y. Ohsawa, H. Yoda, N. Shimomura, S. Shirotori, S. Fujita, K. Koi, A. Buyandalai, S. Oikawa, M. Shimizu, Y. Kato, T. Inokuchi, H. Sugiyama, M. Ishikawa, K. Ikegami, S. Takaya, A. Kurobe
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1233-1238 (2018)
Our new proposal of voltage-control spintronics memory (VoCSM) in which spin-orbit torque in conjunction with the voltage-control-magnetic-anisotropy effect works as the writing principle showed small switching current of $37~\mu \text{A}$ for about
Externí odkaz:
https://doaj.org/article/03a3df8d0777445cbb1c3a66abffb36d
Publikováno v:
2022 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMCSI).
Autor:
Y, Kato, Y, Saito, H, Yoda, T, Inokuchi, S, Shirotori, N, Shimomura, S, Oikawa, A, Tiwari, M, Ishikawa, M, Shimizu, B, Altansargai, H, Sugiyama, K, Koi, Y, Ohsawa, A, Kurobe
Publikováno v:
Physical Review Applied. 10(044011):1-11
Autor:
H. Yoda, Y. Ohsawa, Y. Kato, N. Shimomura, M. Shimizu, K. Koi, S. Shirotori, T. Inokuchi, H. Sugiyama, S. Oikawa, B. Altansargai, A. Kurobe
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Autor:
K. Koi, H. Yoda, N. Shimomura, T. Inokuchi, Y. Kato, B. Altansargai, S. Shirotori, Y. Kamiguchi, K. Ikegami, S. Oikawa, H. Sugiyama, M. Shimizu, M. Ishikawa, T. Ajay, Y. Ohsawa, Y. Saito, A. Kurobe
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Autor:
M. Shimizu, H. Yoda, S. Shirotori, N. Shimomura, Y. Ohsawa, T. Inokuchi, K. Koui, Y. Kato, S. Oikawa, H. Sugiyama, A. Buyandalai, M. Ishikawa, K. Ikegami, Y. Kamiguchi, Y. Saito, A. Kurobe
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Akademický článek
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Publikováno v:
Journal of the Magnetics Society of Japan. 32:554-558
Publikováno v:
physica status solidi (c). 1:945-948
Magnetic-field-induced switching of the spin configuration and the resultant spin injection direction have been studied in a Zn1−xMnxTe/ZnTe double quantum well. The up- and down-spin excitons are injected from the Zn1−xMnxTe layers to the ZnTe w
Publikováno v:
Physica B: Condensed Matter. :882-885
Spin injection processes of excitons have been studied in the coupled double-quantum-well structure consisting of magnetic and non-magnetic quantum wells. Transient exciton photoluminescence was analyzed with selective circular-polarization excitatio