Zobrazeno 1 - 10 of 212 pro vyhledávání: '"S, Gebert"'
1
Akademický článek
Large inverted band gap in strained three-layer InAs/GaInSb quantum wells
Autor: C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J.-B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, B. Jouault
Publikováno v: Physical Review Research, Vol 4, Iss 4, p L042042 (2022)
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10–18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHI
Externí odkaz: https://doaj.org/article/f77fdcf9bf0f44c8a93cbfe63f1e2964
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2
Terahertz cyclotron emission from two-dimensional Dirac fermions
Autor: S. Gebert, C. Consejo, S. S. Krishtopenko, S. Ruffenach, M. Szola, J. Torres, C. Bray, B. Jouault, M. Orlita, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe
Publikováno v: Nature Photonics
Nature Photonics, 2023, ⟨10.1038/s41566-022-01129-1⟩
Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmfu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beca48fbe0351a6bd294848d989c74a2
https://doi.org/10.1038/s41566-022-01129-1
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4
Temperature Dependent Zero-Field Splittings in Graphene
Autor: C. Bray, K. Maussang, C. Consejo, J. A. Delgado-Notario, S. Krishtopenko, I. Yahniuk, S. Gebert, S. Ruffenach, K. Dinar, E. Moench, J. Eroms, K. Indykiewicz, B. Jouault, J. Torres, Y. M. Meziani, W. Knap, A. Yurgens, S. D. Ganichev, F. Teppe
Publikováno v: HAL
Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2de6916343a9ac6d1ed447e8e628fbea
https://hal.science/hal-03824955
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5
Akademický článek
High levels of self-efficacy in patients with type 2 diabetes attending a tertiary level clinic
Autor: K. Mostert Wentzel, C. Nel, A.J. van Rooijen, J. Francis, G. Gibbs, K. Hacker, S. Gebert
Publikováno v: South African Journal of Physiotherapy, Vol 64, Iss 3, Pp 7-11 (2008)
Self-management is a vital element in the care of type 2diabetes patients. In turn, self-efficacy plays a major role in patients’ self-management. Self-efficacy is the patient’s personal judgement of his/herconfidence in performing aspects of dia
Externí odkaz: https://doaj.org/article/d75335b598224401902cab59ebd3c725
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6
Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations
Autor: Sergey S. Krishtopenko, S. A. Dvoretskii, Frederic Teppe, S. Mantion, Benoit Jouault, Sebastien Nanot, S. V. Morozov, Nikolay N. Mikhailov, Christophe Consejo, Colin Avogadri, Sandra Ruffenach, S. Gebert, Wojciech Knap
Publikováno v: Physical Review B: Condensed Matter (1978-1997)
Physical Review B: Condensed Matter (1978-1997), American Physical Society, 2020, 102 (7), pp.075302. ⟨10.1103/PhysRevB.102.075302⟩
Phys. Rev. B
We investigated quantum Hall states in an inverted HgTe quantum well (QW) close to the critical thickness using transconductance fluctuation (TF) measurements. In the conduction band, several integer quantum Hall states were observed, corresponding t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fc6e8c26698e4fce78f305c27e66ba0
https://hal.archives-ouvertes.fr/hal-02919868/file/FinalFile_transconductance_v7_resub_final.pdf
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7
High-frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures
Autor: Dieter Weiss, A. P. Dmitriev, V. V. Bel'kov, M. Otteneder, S. Gebert, D. Disterheft, G. V. Budkin, Sergey Ganichev, Jonas D. Ziegler, S. A. Dvoretsky, S. Baumann, D. A. Kozlov, Z. D. Kvon, Stefan Hubmann, E. L. Ivchenko, N. N. Mikhailov
Publikováno v: Physical Review B
We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ba2d6217d949bb3e54bb8c175eaf55b
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8
Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
Autor: Nikolay N. Mikhailov, Sandra Ruffenach, Jeremie Torres, Sergey S. Krishtopenko, Benoit Jouault, S. A. Dvoretskii, A. M. Kadykov, Frederic Teppe, Colin Avogadri, Christophe Consejo, Wojciech Knap, S. Gebert
Publikováno v: Physical Review B: Condensed Matter (1978-1997)
Physical Review B: Condensed Matter (1978-1997), American Physical Society, 2020, 102 (4), pp.041404. ⟨10.1103/PhysRevB.102.041404⟩
Physical Review B
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::654268cd89c5b56ca530a3421ce2bf1c
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9
Akademický článek
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10
Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
Autor: Johanna Pernul, Gregor Mussler, Irene Aguilera, Jacob C. König-Otto, Detlev Grützmacher, Stephan Winnerl, Helene Plank, S. Gebert, Martin Lanius, J. Kampmeier, S. N. Danilov, Sergey Ganichev
Publikováno v: Physical review materials 2(2), 024202 (2018). doi:10.1103/PhysRevMaterials.2.024202
Physical Review Materials 2(2018), 024202
We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi, Sb) Te based three-dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the ph
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::808c37d8f3ee328d7062c1ef6bf51430
http://arxiv.org/abs/1711.11457
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