Zobrazeno 1 - 10
of 85
pro vyhledávání: '"S, Alberici"'
Autor:
Sabina Spiga, Giorgia M. Lopez, Alberto Modelli, Marco Fanciulli, Claudia Wiemer, Alessandro Sebastiani, Rossella Piagge, Massimo Caniatti, Vincenzo Fiorentini, Enrica Ravizza, Enrico Bellandi, G. Pavia, Mauro Alessandri, Gabriella Ghidini, Emiliano Cadelano, S. Alberici
Publikováno v:
ECS Transactions. 1:91-105
The scaling down of Flash memories can be pursued using the conventional stacked gate architecture only with major changes of the active dielectrics, mainly the inter-poly dielectric (IPD).The required 4-6 nm EOT thickness for the IPD cannot be achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9abd3193f1d7724c56b10e28c8d61d55
https://doi.org/10.1149/1.2209258
https://doi.org/10.1149/1.2209258
Autor:
Stefano Guerrieri, G. Tallarida, S. Alberici, Claudia Wiemer, T. Marangon, G. Brunoldi, Enrica Ravizza
Publikováno v:
Microelectronic Engineering. 82:289-295
Self-annealing and seed-aging effects are probably among the most important topics of recent investigations on the microstructural changes in copper thin films and of their effects on electrical and optical properties. Aim of this work is the charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b541ff10587afdb4d6cef77a7bbe704
https://doi.org/10.1016/j.mee.2005.07.037
https://doi.org/10.1016/j.mee.2005.07.037
Publikováno v:
Materials Science and Engineering: B. :203-208
Self-aligned silicides, as the Co–Si system for less than 0.13 μm applications, are still under investigation, due to some lack of their structural and basic characteristics knowledge. Due to oxygen contamination, originated by a number of possibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dde5a3b24b537809f2d98d5f645eacaf
https://doi.org/10.1016/j.mseb.2004.07.011
https://doi.org/10.1016/j.mseb.2004.07.011
Publikováno v:
Microelectronic Engineering. 76:227-234
Wafer thinning process before dicing, die attach, wire bonding, and in resin molding package operations requires the protection of the silicon wafer surface by means of a sticking grinding tape. The adhesive layer between this tape and wafer front si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e8c06ac0038ce0359b79554012ff977
https://doi.org/10.1016/j.mee.2004.07.040
https://doi.org/10.1016/j.mee.2004.07.040
Autor:
G. Visalli, Carlo Emanuele Nobili, S. Alberici, Massimo Bersani, Federico Corni, Rita Tonini, S. Morin, P. Ferrari, G. Ottaviani, L. Castoldi
Publikováno v:
Microelectronic Engineering. 76:153-159
Interaction between 5 @mm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV ^4He^+ Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af6838bc731fde39946e71dfc6850d5c
https://doi.org/10.1016/j.mee.2004.07.043
https://doi.org/10.1016/j.mee.2004.07.043
Publikováno v:
Microelectronic Engineering. 76:343-348
Interactions between thin cobalt, 40 nm, and a thick - 250 nm - silicon film were investigated by in situ sheet resistance measurements. Poly and amorphous silicon films, both deposited by CVD, were used. MeV 4He+ Rutherford Backscattering and X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c082a5db72883c2e0bfb82e13428ce9
https://doi.org/10.1016/j.mee.2004.07.038
https://doi.org/10.1016/j.mee.2004.07.038
Autor:
L. Oggioni, S. Alberici, Pietro Petruzza, Mignot Yann, D. Coulon, P. Joubin, D. Piumi, L. Zanotti
Publikováno v:
Microelectronic Engineering. 70:558-565
The random formation of micrometric crystals on Al bonding pads can be an issue affecting wire bonding metal pad quality. The dry etch chemistry used to remove final passivation dielectric layers from the top of the bonding Al pad area is in fact bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b731a50eab0c07d62a1ef641368c677
https://doi.org/10.1016/s0167-9317(03)00418-0
https://doi.org/10.1016/s0167-9317(03)00418-0
Autor:
G. Casati, G. Queirolo, F. Cazzaniga, G. Pavia, S. Alberici, A. Sabbadini, V. Cusi, C. Bresolin
Publikováno v:
Microelectronic Engineering. 55:205-211
MOCVD-TiN deposition from TDMAT precursor consists of two steps: a deposition and a plasma treatment in hydrogen. The effects of different plasma treatment times are tested on high aspect ratio contacts, finding an increase in the number of high resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f2464f0292e9c95914e8bbc03bec9a
https://doi.org/10.1016/s0167-9317(00)00449-4
https://doi.org/10.1016/s0167-9317(00)00449-4
Publikováno v:
Journal of Alloys and Compounds. 310:209-213
Internal friction (IF) and dynamic modulus (M d ) measurements have been performed on samples of MANET steel (10.5% Cr, 0.17% C) to study the interaction of H with C–Cr n clusters. Samples of MANET steel as-quenched and annealed for 7.2×10 4 s at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da042aa953bfc41d0148893f4cf801bf
https://doi.org/10.1016/s0925-8388(00)01027-6
https://doi.org/10.1016/s0925-8388(00)01027-6
Publikováno v:
Journal of Nuclear Materials. :754-760
A laboratory produced very homogeneous a-C:D-layer (DIARC, 3.5 μm of thickness, D/C=0.1) is oxidised in oxygen (0.3–20 kPa) at temperatures of 523–723 K in order to generate D-releases; the results are used in development of a cleaning procedure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb80b1e25cee801e8ff0e1003c4f049
https://doi.org/10.1016/s0022-3115(98)00678-3
https://doi.org/10.1016/s0022-3115(98)00678-3