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pro vyhledávání: '"S, Ailey"'
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Autor:
Kevin J. Linthicum, Robert F. Davis, Zlatko Sitar, K. S. Ailey, M. J. Paisley, Satoru Tanaka, R. S. Kern, D.J. Kester, L.B. Rowland
Publikováno v:
Journal of Crystal Growth. 178:87-101
Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III–V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b175c1b122f6d760536a2662555651
https://doi.org/10.1016/s0022-0248(97)00077-8
https://doi.org/10.1016/s0022-0248(97)00077-8
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1647-1652
The adsorption and reaction of NO on a model catalyst composed of Rh supported on ceria has been studied. CeO2 films were grown epitaxially by laser ablation onto SrTiO3(001) substrates. X-ray diffraction and transmission electron microscopy indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7ae4c533a15f493a93128fbc3b44ce
https://doi.org/10.1116/1.580647
https://doi.org/10.1116/1.580647
Autor:
Chunlei Wang, W. G. Perry, K. S. Ailey, Zlatko Sitar, T. W. Weeks, Michael D. Bremser, Robert F. Davis, Satoru Tanaka, R. S. Kern
Publikováno v:
Solid-State Electronics. 41:129-134
Thin films of AlN and GaN are deposited primarily via the common forms of organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). Sapphire is the most common substrate; however, a host of materials have been used with varying deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edeeb83b948696e75e0baa0fc928b5a4
https://doi.org/10.1016/s0038-1101(96)00152-9
https://doi.org/10.1016/s0038-1101(96)00152-9
Publikováno v:
Journal of the European Ceramic Society. 17:1775-1779
Monocrystalline GaN(0001) thin films were grown at 950 °Con AlN(0001) buffer layers previously deposited at 1100 °C on α(6H)-SiC(0001) si substrates via metallorganic chemical vapor deposition (MOCVD). Films of Al x Ga 1 − x N (0 ≤ x ≤ 1) we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c589f8c0fa1a6291d34492a4b068a1b
https://doi.org/10.1016/s0955-2219(97)00077-0
https://doi.org/10.1016/s0955-2219(97)00077-0
Publikováno v:
Microelectronics Journal. 25:661-674
Fabrication of optoelectronic devices from III-N materials, operable in the blue and ultraviolet regions of the spectrum, has been a goal of many groups since the first infrared and red devices were commercially produced. Commercially viable blue-lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0c0b2e441201054c11f258204c3308
https://doi.org/10.1016/0026-2692(94)90132-5
https://doi.org/10.1016/0026-2692(94)90132-5
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:3074-3081
Boron nitride (BN) thin films have been grown on [100] oriented single crystal Si, diamond, Cu and Ni substrates by ion beam assisted deposition using electron beam evaporation of boron together with simultaneous bombardment by nitrogen and argon ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::212f32c8e6efb6438ec402b21d1d74c7
https://doi.org/10.1116/1.578938
https://doi.org/10.1116/1.578938
Publikováno v:
Diamond and Related Materials. 3:332-336
Boron nitride (BN) thin films have been deposited on single-crystal Si(100) wafers using electron beam evaporation of B with simultaneous bombardment by nitrogen and argon ions. Fourier transform IR spectroscopy and high resolution transmission elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af2b013f83225b4f9766c154415625c1
https://doi.org/10.1016/0925-9635(94)90181-3
https://doi.org/10.1016/0925-9635(94)90181-3
Publikováno v:
Journal of Materials Research. 8:1213-1216
Boron nitride (BN) thin films were deposited on monocrystalline Si(100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect of film thickness on the resultant BN phase was investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17acd471f141406b4cd27f45794b1092
https://doi.org/10.1557/jmr.1993.1213
https://doi.org/10.1557/jmr.1993.1213
Publikováno v:
Journal of Materials Research. 8:1101-1108
The operative and controlling mechanisms of steady-state creep in hot-pressed AlN have been determined both from kinetic data within the temperature and constant compressive stress ranges of 1470 to 1670 K and 100 to 370 MPa, respectively, and from t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2b522057259115a68cb6976da9453c2
https://doi.org/10.1557/jmr.1993.1101
https://doi.org/10.1557/jmr.1993.1101