Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ryuzo Morikawa"'
Autor:
Kohei Horii, Ryuzo Morikawa, Katsuhiro Hata, Kenichi Morokuma, Yukihiko Wada, Yoshiko Obiraki, Yasushige Mukunoki, Makoto Takamiya
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Autor:
Kohei Horii, Ryuzo Morikawa, Ryunosuke Katada, Katsuhiro Hata, Takayasu Sakurai, Shin-Ichiro Hayashi, Keiji Wada, Ichiro Omura, Makoto Takamiya
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Autor:
Makoto Takamiya, Yoshitaka Yamauchi, Ryunosuke Katada, Katsuhiro Hata, Ryuzo Morikawa, Ting-Wei Wang, Cheng-Hsuan Wu, Toru Sai, Po-Hung Chen
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution
Autor:
Ting-Wei Wang, Toru Sai, Makoto Takamiya, Ryunosuke Katada, Cheng-Hsuan Wu, Katsuhiro Hata, Yoshitaka Yamauchi, Po-Hung Chen, Ryuzo Morikawa
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A digital gate driver (DGD) is an important technology to reduce both switching loss and voltage and/or current overshoot. In this paper, a 5 V, 300 MSa/s, 6-bit DGD IC, where the gate current is varied in 64 levels for each of 16 3.3-ns time interva
Publikováno v:
2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia).
A new gate driving technique using a digital gate driver IC is proposed to reduce both conductive EMI in user-defined specific frequency band and the switching loss in IGBTs to achieve a highly efficient power converter complying with EMI regulations
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
To reduce the development period of power electronics equipment to satisfy EMI regulations, an automatic generation method of gate driving vectors (AGGV) for the digital gate drivers is proposed. In the proposed AGGV, the frequency spectrum of the V
Autor:
Po-Hung Chen, Katsuhiro Hata, Takayasu Sakurai, Ting-Wei Wang, Ryuzo Morikawa, Toru Sai, Makoto Takamiya
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
To solve the trade-off between the switching loss and the current/voltage overshoot of power transistors, a digital gate driver is effective. A temperature and load current dependent optimization of the gate driving vectors (GV) for the digital gate