Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Ryusuke Nebashi"'
Autor:
Xu BAI, Ryusuke NEBASHI, Makoto MIYAMURA, Kazunori FUNAHASHI, Naoki BANNO, Koichiro OKAMOTO, Hideaki NUMATA, Noriyuki IGUCHI, Tadahiko SUGIBAYASHI, Toshitsugu SAKAMOTO, Munehiro TADA
Publikováno v:
IEICE Transactions on Electronics. :627-630
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e4fa74ec46c2aae54e6d7201acec8c8
https://doi.org/10.1587/transele.2021fus0005
https://doi.org/10.1587/transele.2021fus0005
Autor:
Naoki Banno, Hideaki Numata, Koichiro Okamoto, Ryusuke Nebashi, Tadahiko Sugibayashi, Noriyuki Iguchi, Masanori Hashimoto, Bai Xu, Makoto Miyamura, Munehiro Tada, Toshitsugu Sakamoto
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:2250-2262
Offering a combination of low latency, high energy-efficiency, and flexibility, field-programmable gate arrays (FPGAs) suit applications ranging from Internet of Things (IoT) computing to artificial intelligence (AI). The conventional static random a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc8a3ff8c9b7f118b1c11e89d2a9d4b
https://doi.org/10.1109/jssc.2021.3117260
https://doi.org/10.1109/jssc.2021.3117260
Autor:
Munehiro Tada, Bai Xu, Ryusuke Nebashi, Toshitsugu Sakamoto, Kazunori Funahashi, Noriyuki Iguchi, Tadahiko Sugibayashi, Naoki Banno, Makoto Miyamura, K. Okamoto, Hideaki Numata
Publikováno v:
FPL
A nonvolatile FPGA using atom-switch crossbars is implemented in a 28nm CMOS. The depopulated atom-switch crossbar with double-gate layout achieves 75% area saving. The routability degradation due to the depopulation is mitigated by a modified routin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43055bbd9508f1e708dc737311a33872
https://doi.org/10.1109/fpl50879.2020.00060
https://doi.org/10.1109/fpl50879.2020.00060
Autor:
Ryusuke Nebashi, K. Okamoto, Munehiro Tada, Masanori Hashimoto, Naoki Banno, Bai Xu, Toshitsugu Sakamoto, Tadahiko Sugibayashi, Noriyuki Iguchi, Hideaki Numata, Makoto Miyamura
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
1.5x energy-efficient and 1.4x operation-speed, nonvolatile via-switch (VS) FPGA with atom switch and a-Si/SiN/a-Si varistor is demonstrated in a 65nm-node for various basic applications. For rapid and low-cost migration from VS-FPGA to ASIC, “hard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f444bda96ef9835e128157c614b3d22
https://doi.org/10.1109/vlsitechnology18217.2020.9265046
https://doi.org/10.1109/vlsitechnology18217.2020.9265046
Autor:
Bai Xu, Hiromitsu Hada, Ryusuke Nebashi, Noriyuki Iguchi, Kazunori Funahashi, Makoto Miyamura, K. Okamoto, Toshitsugu Sakamoto, Hideaki Numata, Naoki Banno, Tadahiko Sugibayashi, Munehiro Tada
Publikováno v:
IRPS
An ON-state retention of a 40nm-node atom switch embedded nonvolatile memory (eNVM) has been carefully investigated for IoT/AI inference solution. Based on ON-conductance (G on ) tuning model of atom switch, one order of magnitude lower programming p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e24c09f6a889696528d6fa1f33761b
https://doi.org/10.1109/irps45951.2020.9128967
https://doi.org/10.1109/irps45951.2020.9128967
Autor:
Makoto Miyamura, Bai Xu, Naoki Banno, Tadahiko Sugibayashi, Noriyuki Iguchi, Hiromitsu Hada, Koichiro Okamoto, Munehiro Tada, Toshitsugu Sakamoto, Hideaki Numata, Ryusuke Nebashi
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGB09
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::970b4902d8c664e2853c693018420d68
https://doi.org/10.7567/1347-4065/ab65ce
https://doi.org/10.7567/1347-4065/ab65ce
Autor:
Makoto Miyamura, Ryusuke Nebashi, Toshitsugu Sakamoto, Yukihide Tsuji, Hideaki Numata, Munehiro Tada, Tadahiko Sugibayashi, K. Okamoto, A. Morioka, Naoki Banno, Hiromitsu Hada, Bai Xu, Noriyuki Iguchi
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
Key device/circuit technologies for realizing a 28nm-node atom switch programmable logic (AS-PL) have been developed. An advanced polymer solid-electrolyte (PSE) reduces set voltage down to 1.6 V while ensuring ON-state and OFF-state reliabilities un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24dad3de61b84804adf305ffb7458e3b
https://doi.org/10.1109/vlsit.2018.8510703
https://doi.org/10.1109/vlsit.2018.8510703
Autor:
Daisuke Suzuki, Takahiro Hanyu, Sadahiko Miura, Tadahiko Sugibayashi, Ryusuke Nebashi, Hiroaki Honjo, Masanori Natsui, Yukihide Tsuji, Hideo Ohno, Ayuka Morioka, Tetsuo Endoh, Shoji Ikeda, Keizo Kinoshita, Noboru Sakimura
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:476-489
A magnetic tunnel junction (MTJ)-based logic-in-memory hardware accelerator LSI with cycle-based power gating is fabricated using a 90 nm MTJ/MOS process on a 300 mm wafer fabrication line for practical-scale, fully parallel motion-vector prediction,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b082d3a1a78e079ef015d4f5c6393f
https://doi.org/10.1109/jssc.2014.2362853
https://doi.org/10.1109/jssc.2014.2362853
Autor:
Hiromitsu Hada, Noriyuki Iguchi, Makoto Miyamura, Munehiro Tada, Yukihide Tsuji, A. Morioka, Ryusuke Nebashi, Bai Xu, Naoki Banno, Toshitsugu Sakamoto, K. Okamoto, Tadahiko Sugibayashi
Publikováno v:
2017 Symposium on VLSI Technology.
For the first time, a 40nm-node, 2x logic density, 3.8x operation speed, and 3x power efficient, nonvolatile programmable logic (NPL) is demonstrated by using Cu atom switch for configuration switches. The switching characteristics of the atom switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb2d4c04853f4f863663e2390f6232cd
https://doi.org/10.23919/vlsit.2017.7998188
https://doi.org/10.23919/vlsit.2017.7998188
Autor:
Tadahiko Sugibayashi, Shunsuke Fukami, Keizo Kinoshita, Sadahiko Miura, Hiroaki Honjo, Hideo Ohno, Michio Murahata, Noboru Sakimura, Ayuka Morioka, Yukihide Tsuji, K. Tokutome, Naoki Kasai, Ryusuke Nebashi, Kunihiko Ishihara
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
We have developed a three-terminal domain wall motion (DWM) device. We found that its performance was significantly degraded by ion irradiation to the DWM materials under conventional etching conditions with Ar/NH3/CO gas mixture plasma for the devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c56c50c325ebbda064e551ceb43d9f0
https://doi.org/10.1109/tmag.2014.2325019
https://doi.org/10.1109/tmag.2014.2325019