Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ryunosuke Katada"'
Autor:
Kohei Horii, Ryuzo Morikawa, Ryunosuke Katada, Katsuhiro Hata, Takayasu Sakurai, Shin-Ichiro Hayashi, Keiji Wada, Ichiro Omura, Makoto Takamiya
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::897e7c45dc1eb1f5788f706c1f3516b5
https://doi.org/10.1109/apec43599.2022.9773623
https://doi.org/10.1109/apec43599.2022.9773623
Autor:
Makoto Takamiya, Yoshitaka Yamauchi, Ryunosuke Katada, Katsuhiro Hata, Ryuzo Morikawa, Ting-Wei Wang, Cheng-Hsuan Wu, Toru Sai, Po-Hung Chen
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd6e01c68605c4350d67c7357a247f7
https://doi.org/10.1109/ecce47101.2021.9595264
https://doi.org/10.1109/ecce47101.2021.9595264
Autor:
Ting-Wei Wang, Toru Sai, Makoto Takamiya, Ryunosuke Katada, Cheng-Hsuan Wu, Katsuhiro Hata, Yoshitaka Yamauchi, Po-Hung Chen, Ryuzo Morikawa
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A digital gate driver (DGD) is an important technology to reduce both switching loss and voltage and/or current overshoot. In this paper, a 5 V, 300 MSa/s, 6-bit DGD IC, where the gate current is varied in 64 levels for each of 16 3.3-ns time interva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a967017e5d395c63560a1c73c7fcffb
https://doi.org/10.23919/ispsd50666.2021.9452225
https://doi.org/10.23919/ispsd50666.2021.9452225
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
To eliminate a load current (I L ) sensor required to determine optimum gate driving parameters of a digital gate driver for IGBTs and to estimate I L from the gate driver, a momentary high-Z gate driving (MHZGD) method is proposed. In MHZGD, the out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1879ef2229a3bddbd866b4a9fe4ff95b
https://doi.org/10.1109/ecce-asia49820.2021.9479379
https://doi.org/10.1109/ecce-asia49820.2021.9479379