Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ryun-Hwi Kim"'
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:469-473
Autor:
Ryun-Hwi Kim, Eun Jin Kim, Woo-Hyun Ahn, Jeong-Gil Kim, Terirama Thingujam, Quan Dai, Jung-Hee Lee, Seung-Hyeon Kang, Jun-Hyeok Lee
Publikováno v:
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
In this work, threshold voltage modulation realized by adjusting fin width and dielectric layer were investigated through MIS-FinFETs. As fin width decreases from 120 to 30 nm, threshold voltage shifts toward positive direction and finally becomes po
Autor:
Kyu Jun Cho, Hyung Sup Yoon, Hokyun Ahn, Jung-Hee Lee, Ryun-Hwi Kim, Haecheon Kim, Ji-Heon Kim, Sung-Jae Chang, Jae-Won Do, Jin-Mo Yang, Jong-Won Lim, Min Jeong Shin, Byoung-Gue Min, Hyun-Wook Jung
Publikováno v:
Thin Solid Films. 628:31-35
AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic tra
Autor:
Hyoung-Joo Kim, Dong-Seok Kim, Byeong-Ok Lim, Bok-Hyung Lee, Chul-Ho Won, Ryun-Hwi Kim, Gil-Wong Choi, Jung-Hee Lee, In-Pyo Hong
Publikováno v:
Journal of Crystal Growth. 395:5-8
AlGaN/GaN heterostructure was grown on semi-insulating 6H–SiC substrate. The effect of the thickness of the initial AlN buffer layer on the crystalline quality and the stress of the grown GaN layer were investigated. The semi-insulating characteris
Autor:
Ki-Sik Im, Chul-Ho Won, Dong-Seok Kim, Do-Kywn Kim, Hee-Sung Kang, Ryun-Hwi Kim, Jung-Hee Lee, Young-Woo Jo, Ki-Won Kim
Publikováno v:
Electronics Letters. 50:1749-1751
A vertical-type mesa-gate GaN metal–oxide semiconductor field-effect transistor (MOSFET) has been fabricated. The mesa-gate structure can be easily achieved by a single deep etch to the n+-GaN which is the drain of the device, whereas the trench-ga
Autor:
Ryun-Hwi Kim, Hyoung-Joo Kim, Gil-Wong Choi, Ki-Sik Im, Jung-Hee Lee, Byeong-Ok Lim, Jongmin Lee, Bok-Hyung Lee, Jung Soo Lee, Sang-Il Kim
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 24:128-135
This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density o
Publikováno v:
Electronics Letters. 49:1013-1015
A surface passivation technique of high electron mobility transistor (HEMT) devices is reported. The passivated HEMT device has a much higher RF performance of FT and F max than a non-passivated one. The AlGaN/GaN HEMT has a short gate length of 0.15
Autor:
Ryun-Hwi Kim, Ki-Sik Im, Chun Sung Lee, Jung-Hee Lee, Ki-Won Kim, Dong-Seok Kim, Sorin Cristoloveanu
Publikováno v:
IEEE Electron Device Letters. 34:27-29
A single-nanoribbon Al2O3/GaN metal-insulator-semiconductor field-effect transistor (MISFET) has been fabricated. The fabricated device exhibits normally off operation with a threshold voltage of 2.1 V. The device also exhibits superior performances
Autor:
Yoo-Mi Kwon, Dong-Hyeok Son, Ki-Won Kim, Jae-Hoon Lee, Sang-Min Jeon, Dong-Seok Kim, Hee-Sung Kang, Ryun-Hwi Kim, Sorin Cristoloveanu, Jung-Hee Lee, Young-Woo Jo, Ki-Sik Im, Chul-Ho Won
Publikováno v:
25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013)
25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013), May 2013, Kanazawa, Japan. ⟨10.1109/ISPSD.2013.6694433⟩
25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013), May 2013, Kanazawa, Japan. ⟨10.1109/ISPSD.2013.6694433⟩
Heavily doped GaN nanochannel FinFET has been proposed and fabricated, for the first time, which does not have any p-n junction or heterojunction. In spite of its easy and simple epitaxial growth and fabrication process, the fabricated device with na
Autor:
K. I. Jang, Jongmin Lee, M. K. Kwon, Chul-Ho Won, Hee-Sung Kang, Ryun-Hwi Kim, Dong-Seok Kim, Y. M. Kwon, Ki-Sik Im, D. H. Son, Kwang-Hee Kim, S. M. Jeon, Y. W. Jo
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.