Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ryuji Onishi"'
Autor:
Shigaki Shuhei, Ryuji Onishi, Shibayama Wataru, Satoshi Takeda, Makoto Nakajima, Rikimaru Sakamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 29:69-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161eab0acf7ce3c25e676d9642524574
https://doi.org/10.2494/photopolymer.29.69
https://doi.org/10.2494/photopolymer.29.69
Autor:
Ryuji Onishi, Shibayama Wataru, Makoto Nakajima, Shigaki Shuhei, Satoshi Takeda, Rikimaru Sakamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 29:469-474
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a16ef7cda9ddd227d19851ed0b30896
https://doi.org/10.2494/photopolymer.29.469
https://doi.org/10.2494/photopolymer.29.469
Autor:
Syuhei Shigaki, Ho Bang Ching, Yaguchi Hiroaki, Ryuji Onishi, Suguru Sassa, Endo Takafumi, Noriaki Fujitani, Rikimaru Sakamoto
Publikováno v:
ECS Transactions. 60:263-271
For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for Lithography and Etching performance. The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345c909f4f4f1a5288a4459d80b0c5ef
https://doi.org/10.1149/06001.0263ecst
https://doi.org/10.1149/06001.0263ecst
Publikováno v:
ECS Transactions. 52:259-265
EUV lithography is one of the next generation lithography candidates for hp22nm and beyond. However the light source, tools, masks and resists are still the key issues for the EUV lithography. For the development of the EUV light source, the low powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e24e93fdd159ce06abcd097595bc270
https://doi.org/10.1149/05201.0259ecst
https://doi.org/10.1149/05201.0259ecst
Autor:
Shigaki Shuhei, Shibayama Wataru, Ryuji Onishi, Noriaki Fujitani, Yaguchi Hiroaki, Rikimaru Sakamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 26:679-683
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6345a46778972f422ae97056d9befd1
https://doi.org/10.2494/photopolymer.26.679
https://doi.org/10.2494/photopolymer.26.679
Publikováno v:
Journal of Photopolymer Science and Technology. 26:685-689
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8440aba9bf3b4192cfd97bf8e461bfd
https://doi.org/10.2494/photopolymer.26.685
https://doi.org/10.2494/photopolymer.26.685
Autor:
Satoshi Takeda, Makoto Nakajima, Shibayama Wataru, Rikimaru Sakamoto, Shigaki Shuhei, Ryuji Onishi
Publikováno v:
SPIE Proceedings.
ArF lithography is still major process to develop N7/N5 devices. Especially in resist materials, DOF, roughness and CD uniformity are the biggest key parameters in fine pitches. To improve these issues, we newly propose to apply Dry Development Rinse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf19ff727c32bbe7a70a3164b07cb464
https://doi.org/10.1117/12.2219521
https://doi.org/10.1117/12.2219521
Autor:
Rikimaru Sakamoto, Ryuji Onishi, Satoshi Takeda, Makoto Nakajima, Shibayama Wataru, Shigaki Shuhei
Publikováno v:
SPIE Proceedings.
We developed the novel process and material which can prevent the pattern collapse issue perfectly. The process was Dry Development Rinse (DDR) process, and the material used in this process was DDR Material (DDRM). DDRM was containing siloxane polym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::991a199e0af563293a68f167f2e1b175
https://doi.org/10.1117/12.2218825
https://doi.org/10.1117/12.2218825
Autor:
Masakazu Kato, Shigeo Kimura, Daisuke Maruyama, Bang-Ching Ho, Rikimaru Sakamoto, Tomohisa Ishida, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, Endo Takafumi
Publikováno v:
ECS Transactions. 27:479-487
Double patterning process with ArF immersion lithography has been developed as one of the most promising candidate for hp32 node and beyond. However complicated process flow and cost of ownership are the critical issue for this process. LELE (Litho-E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84dd5f289f3e23ac6528833a5e427d27
https://doi.org/10.1149/1.3360663
https://doi.org/10.1149/1.3360663
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Since the pattern pitch is getting smaller and smaller, the pattern collapse issue has been getting sever problem in the lithography process. Pattern collapse is one of the main reasons for minimizing of process margin at fine pitch by ArF-immersion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5faad37c5e0277fc6289ea11c1744352
https://doi.org/10.1117/12.2085742
https://doi.org/10.1117/12.2085742