Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Ryuichi Sugie"'
Autor:
Ryuichi Sugie, Tomoyuki Uchida, Ai Hashimoto, Seishi Akahori, Koji Matsumura, Yoshiharu Tanii
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 751-756 (2022)
Ion implantation and activation annealing are key processes in the creation of an ideal free carrier distribution in semiconductor devices. Ultra-wide-bandgap (UWBG) semiconductors, such as gallium oxide (Ga2O3) and aluminum nitride (AlN), have many
Externí odkaz:
https://doaj.org/article/6d19efd12788447883ead2ca822dff6e
Publikováno v:
Journal of Electronic Materials. 51:1541-1547
Autor:
Kensuke Inoue, Ryuichi Sugie, Takahiro Shibamori, Takanori Naijo, Ryo Endoh, Aki Ushiku, Eiji Mori
Publikováno v:
2022 International Conference on Electronics Packaging (ICEP).
Autor:
Tomoyuki Uchida, Ryuichi Sugie
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1003
We determine the stress deformation potentials using micro-Raman spectroscopy and evaluate thermal stress in a (−201) plane β-Ga2O3 mounted on a Cu plate with a Pb-free solder. We conduct four-point bending tests and thermomechanical experiments t
Autor:
Tsutomu Araki, Seiya Kayamoto, Yuuichi Wada, Yuuya Kuroda, Daiki Nakayama, Naoki Goto, Momoko Deura, Shinichiro Mouri, Takashi Fujii, Tsuguo Fukuda, Yuuji Shiraishi, Ryuichi Sugie
Publikováno v:
Applied Physics Express. 16:025504
ScAlMgO4 (SAM) has attracted attention as a substrate for nitride semiconductor crystal growth owing to its small a-axis lattice mismatch with GaN and InGaN. In this study, we investigated GaN growth on a SAM substrate via radio-frequency plasma-exci
Publikováno v:
Journal of Electronic Materials. 49:5085-5090
We performed cross-sectional cathodoluminescence (CL) for gallium nitride (GaN)-based high electron mobility transistors (HEMTs) to investigate process-induced defects. The cross-sectional CL measurements at room temperature clearly show the intensit
Autor:
Ryuichi Sugie, Tomoyuki Uchida
Publikováno v:
Journal of Physics D: Applied Physics. 55:465101
The behavior of hole polarons in β-gallium oxide (Ga2O3) has attracted significant attention. Depth-resolved cathodoluminescence (CL) was used to investigate the minority carrier dynamics in β-Ga2O3. First, a model describing CL intensity was propo
Autor:
Koji Matsumura, Ai Hashimoto, Tomoyuki Uchida, Yoshiharu Tanii, Seishi Akahori, Ryuichi Sugie
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Gallium oxide (Ga 2 O 3 ) is one of the ultra-wide-bandgap (UWBG) semiconductors suitable for power-device applications [ 1 – 7 ]. Ion implantation and activation annealing are important processes to create an ideal local carrier distribution in th
Publikováno v:
Materials Science Forum. 963:259-262
Phase contrast microscopy (PCM) technique was demonstrated as the effective non-destructive discrimination method of TSDs and TEDs in 4H-SiC epitaxial layers in comparison with conventional polarized light microscopy, PL topography, KOH etch pit insp
Autor:
Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, Hiroshi Amano, Kazunobu Kojima, Shigefusa F. Chichibu
Publikováno v:
Applied Physics Express. 15:075505
Energy-dispersive X-ray signals calibrated by Rutherford backscattering indicated the generation of Al13/24Ga11/24N in Ga-rich stripes in a nonflat Al0.58Ga0.42N layer. Also, the CL peak wavelengths of ∼259 and 272 nm also showed the generation of