Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Ryuhei , KIMURA"'
Publikováno v:
Meteorological Applications, Vol 29, Iss 1, Pp n/a-n/a (2022)
Abstract In this study, wet‐bulb globe temperature (WBGT) was measured under wisteria trellises, under tents, and in direct sunlight. In addition, a subject experiment was conducted to consider the relaxation effect of the greenery. In terms of WBG
Externí odkaz:
https://doaj.org/article/7fea73491ff147e3ae494a4702496a38
Publikováno v:
Chemicalpharmaceutical bulletin. 69(2)
The concise syntheses of two alkylated hydroquinone natural products, violaceoids A and C, were accomplished by a protecting-group-free method employing the commercially available 2,5-dihydroxybenzaldehyde as the starting material. The key strategy o
Publikováno v:
Journal of Research in Science Education. 59:265-276
Publikováno v:
帝京科学大学紀要 = Bulletin of Teikyo University of Science. 9:7-13
Robot assisted activity (RAA) using robotic pet ; AIBO (ERS-7, SONY ERC) and electroencephalogram (EEG) measurement was carried out for dementia elderly (11 patients aged 60 - 97)in nursing home in order to estimate positiveeffect of RAA. Neuroactivi
Autor:
Toshihiro , Tetusi, Eiichi , Ohkubo, Noriko , Kato, Shin'ichi , Sato, Ryuhei , Kimura, Mitsuru, Naganuma
Publikováno v:
帝京科学大学紀要 = Bulletin of Teikyo University of Science. 4:41-52
Robot Assisted Activity (RAA) and Robot Assisted Therapy (RAT) were put into practice and shown to be effective at the rehabilitation ward and elderly persons' nursing home using commercially available entertainment robots. Animal Assisted Activity (
Publikováno v:
The Proceedings of the JSME Symposium on Welfare Engineering. 2006:197-200
Publikováno v:
Journal of Crystal Growth. 278:411-414
1.8 μm thick high-quality cubic GaN film was successfully grown on GaAs (1 0 0) using an ultra-thin, low-temperature GaN buffer layer by a plasma-assisted molecular beam epitaxy. The ‘as-grown’ low-temperature buffer layer was amorphous and ultr
Autor:
K. Ishida, Kiyoshi Takahashi, Junichi Shike, Noritaka Tanaka, Atsushi Shigemori, Masamichi Ouchi, Ryuhei Kimura
Publikováno v:
physica status solidi (c). 1:2454-2457
The effects of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by plasma assisted molecular beam epitaxy were investigated. When 10 seconds of nitridation was applied on AlGaAs buffer layer, the surface became very smoo
Publikováno v:
Journal of Crystal Growth. 251:455-459
We demonstrate cubic GaN film growth using a newly developed AlN/GaN ordered alloy grown on GaAs (1 0 0) by plasma assisted molecular beam epitaxy. A significant improvement in crystal quality was achieved by reducing the nitridation time in the init
Publikováno v:
physica status solidi (c). :170-174
Cubic GaN films were grown on GaAs (100) using a newly introduced AlN/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations,