Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ryugo Hikichi"'
Publikováno v:
Photomask Technology 2022.
Publikováno v:
Emerging Patterning Technologies.
Nanoimprint lithography, NIL, is gathering much attention as one of the most potential candidates for the next generation lithography for semiconductor. This technology needs no pattern data modification for exposure, simpler exposure system, and sin
Autor:
Mochihiro Shimizu, Hidekazu Migita, Hiroyuki Ishii, Hiroyuki Iwashita, Masahiro Hashimoto, Masao Ushida, Toshiyuki Suzuki, Morio Hosoya, Hideaki Mitsui, Yasushi Ohkubo, Tsugumi Nagano, Ryugo Hikichi, Noriko Kakehi, Hideyoshi Takamizawa
Publikováno v:
SPIE Proceedings.
193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. At the 32nm technology-node, the performance of photomasks, not only phase-shift masks but also binary masks, needs to be improved, especially in "resoluti
Autor:
Yukihiro Sato, Ryugo Hikichi, Shuichi Sanki, Yasuyuki Kushida, Kiyoshi Ogawa, Akihiko Naito, Naoyuki Ishiwata, Hironori Sasaki, Hiroshi Maruyama
Publikováno v:
SPIE Proceedings.
Shrinking of pattern size on photomask requires tight control on defects and CD qualities. Recent ultra resolution lithography requires tight criteria for defect. In this paper, we describe the main defect factor "re-adsorption of resist" on. This is
Autor:
Carlo Pogliani, Giovanni Bianucci, Gian Luca Cassol, Luigi Raffaele, Shoichi Murata, Ryugo Hikichi, Shiaki Murai, Hidenao Katsuki, Shigeru Noguchi
Publikováno v:
SPIE Proceedings.
The advanced Jeol JBX9000MVII 50kV electron-beam lithography system has been successfully installed at DNP Photomask Europe and timely qualified for the 90nm technology node. The overall performances of this writing tool have thoroughly been assessed
Autor:
Satoru Asai, Shigeru Noguchi, Yoji Kawasaki, Hiroyuki Miyashita, Yukihiro Sato, Yutaka Miyahara, Ryugo Hikichi, Hitoshi Handa, Minoru Naito, Hiroshi Maruyama, Yasuyuki Kushida
Publikováno v:
SPIE Proceedings.
For today’s advanced reticle production, process bias should be reduced as possible, and be “zero” ideally, because of its negative impacts on CD control and pattern fidelity against minute features. In this paper, blanks with Cr film thinner t