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pro vyhledávání: '"Ryousuke Unno"'
Autor:
A. A. N. Gde Sapteka, Djoko Hartanto, Harry Sudibyo, Michiharu Tabe, Daniel Moraru, Hoang Nhat Tan, Ryousuke Unno, Arief Udhiarto, Sri Purwiyanti
Publikováno v:
International Journal of Technology, Vol 6, Iss 3, Pp 318-326 (2015)
This report is focused on the linear region of I-V characteristics of nanoscale highly-doped p-i-n diodes fabricated within ultrathin silicon-on-insulator (SOI) structures with an intrinsic layer length of 200 nm and 700 nm under a forward bias at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6f589641780d0e4544b444cb76842e2
https://doi.org/10.14716/ijtech.v6i3.1150
https://doi.org/10.14716/ijtech.v6i3.1150
