Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Ryousuke Okuyama"'
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(Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review
Autor: Kazunari Kurita, Yoshihiro Koga, Ryousuke Okuyama, Takeshi Kadono, Satoshi Shigematsu, Ayumi Onaka Masada, Ryo Hirose, Hidehiko Okuda
Publikováno v: ECS Meeting Abstracts. :953-953
Complementary metal oxide semiconductor (CMOS) image sensors have become widely used ubiquitous devices such as smart phone and personal computer type tablets. Consumer markets strongly demands more high sensitivity imaging and more high speed image
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7099d5ab13ececd614c3dc8f5e25920
https://doi.org/10.1149/ma2018-02/29/953
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4
Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors
Autor: Ryo Hirose, Yoshihiro Koga, Takeshi Kadono, Hidehiko Okuda, Kazunari Kurita, Ayumi Onaka-Masada, Satoshi Shigematsu, Ryousuke Okuyama
Publikováno v: Japanese Journal of Applied Physics. 57:061302
We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-indu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8885245d80552315875063acb72fdc7c
https://doi.org/10.7567/jjap.57.061302
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5
Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets
Autor: Yoshifumi Ikoma, Ryousuke Okuyama, Teruaki Motooka, Makoto Arita
Publikováno v: Thin Solid Films. 518:3759-3762
We report on the formation and the structural characterization of nanocrystalline Si/SiC ( nc -Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH 3 SiH 3 gas pulse jets. Si rich amorphous SiC ( a -Si 1 − x C
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85117e3199b96527929d595226652de3
https://doi.org/10.1016/j.tsf.2009.10.127
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8
Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review
Autor: Ryo Hirose, Takeshi Kadono, Ayumi Onaka-Masada, Hidehiko Okuda, Yoshihiro Koga, Kazunari Kurita, Ryousuke Okuyama, Satoshi Shigemastu
Publikováno v: physica status solidi (a). 214:1700216
A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen element
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b0bea8127b17fe7e2e975c9867cb8c0
https://doi.org/10.1002/pssa.201700216
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10
Proximity gettering of C3H5 carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities
Autor: Takeshi Kadono, Kazunari Kurita, Ryo Hirose, Ayumi Onaka-Masada, Ryousuke Okuyama, Yoshihiro Koga, Hidehiko Okuda
Publikováno v: Japanese Journal of Applied Physics. 55:121301
A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can imp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c6c4dd919bf12034ab6b47cb604d018
https://doi.org/10.7567/jjap.55.121301
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