Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ryota Shirakawa"'
Autor:
Naoki Fukata, Kunitomo Morisawa, Masatoshi Tsujimura, Masahiro Kitajima, Noriyuki Uchida, Ryota Shirakawa, Kunie Ishioka, Kouichi Murakami, Haruhito Morihiro
Publikováno v:
Japanese Journal of Applied Physics. 48:091204
We found a new filtering effect of hydrogen (H) and deuterium (D) isotope atoms for penetration process into crystal silicon (Si) through the interface between a Si and SiO2 native oxide layer. More H atoms are introduced into Si than D for mixing ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cf26fda9239c3470324f90fa37310a
https://doi.org/10.1143/jjap.48.091204
https://doi.org/10.1143/jjap.48.091204
Publikováno v:
Japanese Journal of Applied Physics. 48:081201
Si nanocrystals (SiNCs) embedded in formed amorphous SiO2 layer and P nanoscale doping have been investigated by electron spin resonance (ESR) measurements at low temperatures. Hydrogen atom treatment is found to be required to determine the proper d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6befbb18e34a22fe7cd27b3b96f8f867
https://doi.org/10.1143/jjap.48.081201
https://doi.org/10.1143/jjap.48.081201
Autor:
Ryota Shirakawa, Masatoshi Tsujimura, Shunichi Hishita, Naoki Fukata, Noriyuki Uchida, Kouichi Murakami
Publikováno v:
Journal of Applied Physics. 105:054307
application/pdf
We have investigated phosphorus ion (P+) implantation in Si nanocrystals (SiNCs) embedded in SiO2, in order to clarify the P donor doping effects for photoluminescence (PL) of SiNCs in wide P concentrations ranging in three order
We have investigated phosphorus ion (P+) implantation in Si nanocrystals (SiNCs) embedded in SiO2, in order to clarify the P donor doping effects for photoluminescence (PL) of SiNCs in wide P concentrations ranging in three order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0b6a5c6cf2835d6fa9193a68607f5c4
https://doi.org/10.1063/1.3088871
https://doi.org/10.1063/1.3088871
Publikováno v:
Journal of applied physics. 102(11):114309
application/pdf
The formation of Si nanocrystallites (nc-Si) in erbium (Er)-dispersed SiOx (x
The formation of Si nanocrystallites (nc-Si) in erbium (Er)-dispersed SiOx (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f142d30fdb66f2d81d2627182ab24942
https://tsukuba.repo.nii.ac.jp/records/18514
https://tsukuba.repo.nii.ac.jp/records/18514