Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ryokan Yuasa"'
Publikováno v:
Physica C: Superconductivity. 180:227-234
We present the anisotropic Josephson effect in the SNS structures consisting of YBaCuO/Au/Nb film sandwiches, using epitaxial YBaCuO films. SNS junctions with a-b plane orientated YBaCuO films on exhibit the Josephson effect, while no Josephson curre
Autor:
Isao Yoshida, Ryokan Yuasa, Yorinobu Yoshisato, Shuichi Yoshikawa, Kazuhiro Shimaoka, Masaaki Nemoto, Kazuya Niki
Publikováno v:
Advances in Superconductivity VIII ISBN: 9784431668732
Tl2Ba2CaCu2Ox(Tl-2212) step-edge Josephson junctions (SEJJs) which are suitable for millimeter wave applicationshave been successfully fabricated on MgO substrates. The Tc, Jc and IcRn products are 100–104K, 1.9–3.4X104A/cm2 and 0.17–0.47mV at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705f13a473aa61fdb1c9ac2984f099ac
https://doi.org/10.1007/978-4-431-66871-8_249
https://doi.org/10.1007/978-4-431-66871-8_249
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Autor:
Isao Yoshida, Shuichi Yoshikawa, Shigeru Maekawa, Ryokan Yuasa, Masaaki Nemoto, Yorinobu Yoshisato
Publikováno v:
Japanese Journal of Applied Physics. 35:1720
C-axis oriented Tl2Ba2CaCu2Oδ thin films have been prepared on MgO with good reproducibility by annealing them in an alumina capsule sealed with a gold gasket. The crystalline alignment of the thin films depends on the annealing temperature, the Tl
Publikováno v:
Japanese Journal of Applied Physics. 32:685
Ion bombardment enhanced etching (IBEE) has been successfully applied to BiSrCaCuO high-T c superconducting thin films using nonaqueous Br2 solution. It was found that the etch rate of the damaged region which was formed by the ion irradiation with a
Publikováno v:
Japanese Journal of Applied Physics. 29:2307
Ion bombardment enhanced etching (IBEE) has been first applied to Bi–Ca–Sr–Cu–O (BCSCO) high-T c superconducting thin films. It was found out that the damaged region formed by the ion irradiation with a 200 keV Si++ focused ion beam was selec
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