Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ryoji Yoshikawa"'
Publikováno v:
Journal of the Japan Society for Technology of Plasticity. 62:111-117
Publikováno v:
Journal of the Japan Society for Technology of Plasticity. 61:138-144
Autor:
Masato Saito, Ryu Komatsu, Kazuki Hagihara, Takeharu Motokawa, Syuichi Taniguchi, Rikiya Taniguchi, Akihiko Ando, Shingo Kanamitsu, Ryoji Yoshikawa, Hideaki Sakurai, Masato Naka, Ryota Seki, Eiji Yamanaka, Machiko Suenaga, Noriko Iida nee Sakurai
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Nanoimprint lithography (NIL) is promising technology for next generation lithography for the fabrication of semiconductor devices. The advantages of NIL are simpler process, less design rule restriction, which lead to lower cost-of-ownership, compar
Autor:
Akihiko Ando, Masamitsu Itoh, Takashi Hirano, Keiko Morishita, Ryoji Yoshikawa, Takashi Kamo, Masato Naka
Publikováno v:
Photomask Technology.
It is generally said that conventional deep ultraviolet inspection tools have difficulty meeting the defect requirement for extreme ultraviolet masks of hp 1X nm. In previous studies, it has been shown that the newly developed optics and systems usin
Publikováno v:
SPIE Proceedings.
Recently, much attention has been paid on nanoimprint lithography (NIL) because of its capability for fabricating device at a low cost without multiple patterning. It is considered as a candidate for next generation lithography technology. NIL is one
Autor:
Shinji Mikami, Takashi Hirano, Eunhyuk Choi, Hideaki Abe, Motofumi Komori, Masafumi Asano, Woo-Yung Jung, Yongho Kim, Ryoji Yoshikawa, Kazuto Matsuki
Publikováno v:
SPIE Proceedings.
We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL), which is recognized as a candidate for next-generation lithography. Template inspection and residual layer thickness (RLT) metrology are discusse
Autor:
Masato Naka, Keisuke Chiba, Ai Kumada, Keiko Morishita, Kosuke Takai, Ryoji Yoshikawa, Yukiyasu Arisawa, Takashi Kamo, Eishi Shiobara, Shingo Kanamitsu
Publikováno v:
Proceedings of SPIE; 7/30/2019, Vol. 11148, p111480X-1-111480X-18, 18p
Autor:
Takashi Hirano, Hideo Tsuchiya, Riki Ogawa, Nobutaka Kikuiri, Ikunao Isomura, Hiromu Inoue, Ryoji Yoshikawa
Publikováno v:
SPIE Proceedings.
Mask inspection tool with DUV laser source has been used for Photo-mask production in many years due to its high sensitivity, high throughput, and good CoO. Due to the advance of NGL technology such as EUVL and Nano-imprint lithography (NIL), there i
Autor:
Takashi Hirano, Kazuto Matsuki, Akiko Kawamoto, Hirotaka Tsuda, Motofumi Komori, Hideaki Abe, Masafumi Asano, Tomoko Ojima, Ryoji Yoshikawa, Hiroki Yonemitsu
Publikováno v:
Japanese Journal of Applied Physics. 56:06GA01
We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for next generation lithography. For NIL, template inspection and residual la
Autor:
Masahiro Hatakeyama, Kenji Terao, Shinji Yamaguchi, Hayashi Takehide, Ryo Tajima, Norio Kimura, Masamitsu Itoh, Takeshi Murakami, Hiroshi Sobukawa, Ryoji Yoshikawa, Kiwamu Tsukamoto, Kenji Watanabe, Masato Naka, Naoya Hayashi, Takashi Hirano
Publikováno v:
SPIE Proceedings.
According to the road map shown in ITRS [1], the EUV mask requirement for defect inspection is to detect the defect size of sub- 20 nm in the near future. EB (Electron Beam) inspection with high resolution is one of the promising candidates to meet s