Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Ryoji Kosugi"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 470-475 (2019)
Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices. As a first-order approximation, growth-rate- and surface-normal-scaling functions were d
Externí odkaz:
https://doaj.org/article/8bd854397d19496187bdf9bea1662c30
Autor:
Manobu Tanaka, Yasunori Tanaka, Tetsuichi Kishishita, Ryoji Kosugi, Keiko Masumoto, Kazutoshi Kojima, Hajime Nishiguchi, Y. Fujita, Y. Fukao
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2787-2793
We report on SiC pn-junction diodes with a high blocking voltage over 3 kV. Although SiC radiation sensors have been developed with a Schottky barrier type due to a simple fabrication process in the early stages, pn junction structures are advantageo
Autor:
Junji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Kohei Adachi, Shingo Tomohisa, Hiroyuki Fujisawa, Hajime Okumura, Shi Yang Ji, Yasuyuki Kawada, Ryoji Kosugi, Naruhisa Miura, Yoshiyuki Yonezawa
Publikováno v:
Materials Science Forum. 1004:445-450
We evaluated crystalline quality of SiC p/n column layers over 20 μm thickness formed by trench-filling-epitaxial growth. Although threading dislocation density of trench-filling-epitaxial layer is almost same as flat n-type epitaxial layer, threadi
Autor:
Tetsuichi Kishishita, Ryoji Kosugi, Yowichi Fujita, Yoshinori Fukao, Kazutoshi Kojima, Keiko Masumoto, Hajime Nishiguchi, Manobu M. Tanaka, Yasunori Tanaka
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Publikováno v:
Materials Science Forum. 963:136-140
Trench-filling epitaxial growth of 4H-SiC by chemical vapor deposition (CVD) with and without HCl was analyzed based on a continuum-diffusion model including the Gibbs–Thomson effect. Qualitative reproduction of the reported observation showed that
Publikováno v:
Materials Science Forum. 963:394-398
Ranges for Al implantations into 4H-SiC (0001) were compared between channeled-ion implantation (without using a MeV implanter) and non-channeled ion implantation using an ion energy E0 in the Bethe–Bloch region (IIBB). Since the latter (i.e., proj
Autor:
Akiyo Nagata, Shi Yang Ji, Kazuhiro Mochizuki, Kazutoshi Kojima, Hajime Okumura, Yoshiyuki Yonezawa, Ryoji Kosugi, Yasuyuki Kawada, Yasuko Matsukawa, Adachi Kohei, Sadafumi Yoshida
Publikováno v:
Materials Science Forum. 963:131-135
By inspecting the CVD growth parameters, such as the flow rates of HCl and H2 carrier gases, the pressure and the C/Si ratio, the trench filling in a high-rate mode with a high growth rate on the bottom and a relatively low growth rate on the mesa to
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 470-475 (2019)
Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices. As a first-order approximation, growth-rate- and surface-normal-scaling functions were d
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.