Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Ryoji Hiroyama"'
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 125:220-224
We have newly introduced a two-step-growth structure and a ridge stripe with steep sidewalls formed with a dry-etching process in the fabrication of a buried ridge stripe structure of a high-power 660 nm laser diode instead of a conventional three-st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492d82f7ed8e21f7b5d43868f47fe9ee
https://doi.org/10.1541/ieejeiss.125.220
https://doi.org/10.1541/ieejeiss.125.220
Publikováno v:
Japanese Journal of Applied Physics. 41:2559-2562
We have introduced a transparent AlGaAs cap layer instead of a conventional GaAs cap layer into high-power 660-nm-band-laser diodes with weaker optical confinement in the perpendicular direction, since this structure enables us to weaken the optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc260e28dd9e275744f57e6c71a53460
https://doi.org/10.1143/jjap.41.2559
https://doi.org/10.1143/jjap.41.2559
Publikováno v:
Japanese Journal of Applied Physics. 41:1154-1157
High-power 660-nm-band AlGaInP laser diodes with a small aspect ratio have been successfully fabricated with a window-mirror structure. The relationship between optical confinement in the perpendicular direction and internal loss was investigated, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07bcacc5be937dd557c15bd8101282e0
https://doi.org/10.1143/jjap.41.1154
https://doi.org/10.1143/jjap.41.1154
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1844-1850
Optimization of the misorientation angle of GaAs substrates to prepare multiple quantum wells (MQWS) and multiple quantum barriers (MQBs) with abrupt barrier-well interfaces is reported. The characteristics of AlGaInP strained MQW laser diodes incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9a83ab09510f006e726548d695a9e8
https://doi.org/10.1109/3.234442
https://doi.org/10.1109/3.234442
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1483-1490
(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P epitaxial layers and the basic characteristics of AlGaInP laser diodes grown on misoriented substrates by metalorganic chemical-vapor deposition (MOCVD) are described. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a18080ddf60e584ef65d8bf10fd5df3d
https://doi.org/10.1109/3.89967
https://doi.org/10.1109/3.89967
High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer
Publikováno v:
CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e1a2563a91703f28652593895b9ac3
https://doi.org/10.1109/cleo.1997.603229
https://doi.org/10.1109/cleo.1997.603229
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a34704631eafe662e5f1bdb274a91251
https://doi.org/10.1109/islc.1992.763616
https://doi.org/10.1109/islc.1992.763616
Publikováno v:
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. In this paper, we report on small-aspect-ratio and high-power 660-nm AlGaInP laser diodes with a newly developed ridge stripe in which the side-walls are steeper than for an ordinary wet-etched mesa-shape ridge stripe. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f676b7dc997dd1f7be2de3e6179b286
https://doi.org/10.1109/cleo.2002.1034300
https://doi.org/10.1109/cleo.2002.1034300
Autor:
Ryoji Hiroyama, Atsushi Tajiri, Ibaraki Akira, Daijiro Inoue, Shingo Kameyama, Masayuki Shono, Minoru Sawada
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1b63770557bfd40a01c41660c0a41d
https://doi.org/10.7567/ssdm.2003.a-4-3
https://doi.org/10.7567/ssdm.2003.a-4-3
Autor:
Ryoji Hiroyama, Masayuki Shono, S. Honda, Y. Bessho, Hiroyuki Kase, T. Niina, T. Ikegami, T. Yamaguchi, K. Yodoshi
Publikováno v:
Proceedings of IEEE 14th International Semiconductor Laser Conference.
Summary form only given. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes were investigated for the first time. The lowest threshold current of 33 mA and the highest maximum operating temperature of 90/spl deg/C were achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b386f6c2df3d0b2bc6f0e46c429aa2f
https://doi.org/10.1109/islc.1994.519336
https://doi.org/10.1109/islc.1994.519336