Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Ryoichi Matsuoka"'
Autor:
Ryoichi Matsuoka, Atsushi Miyamoto
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 135:444-452
Critical dimension scanning electron microscope CD-SEM is widely used as a measurement tool of semiconductor patterns. It is necessary to set imaging sequence including corrections of imaging position and focusing of electron beam for the reliable me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d773a097a821d9d3847c9d0cf6d81e42
https://doi.org/10.1541/ieejeiss.135.444
https://doi.org/10.1541/ieejeiss.135.444
Autor:
Daisuke Hibino, Yutaka Hojo, Daisuke Fuchimoto, Hideo Sakai, Yoshihiro Ota, Yasutaka Toyoda, Ryoichi Matsuoka, Hiroyuki Shindo
Publikováno v:
SPIE Proceedings.
The new measuring method that we developed executes a contour shape analysis that is based on the pattern edge information from a SEM image. This analysis helps to create a highly precise quantification of every circuit pattern shape by comparing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18afb4e171115547f022981c3d43dbc
https://doi.org/10.1117/12.2011459
https://doi.org/10.1117/12.2011459
Publikováno v:
Design for Manufacturability through Design-Process Integration VI.
We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4013a6ef86b7d8f23bc78a49ef78b0
https://doi.org/10.1117/12.915785
https://doi.org/10.1117/12.915785
Publikováno v:
SPIE Proceedings.
We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e4f1e24b70837441c3fa6da2ae49e2
https://doi.org/10.1117/12.867756
https://doi.org/10.1117/12.867756
Publikováno v:
SPIE Proceedings.
We have developed the effective method of mask and silicon 2-dimensional metrology. The aim of this method is evaluating the performance of the silicon corresponding to Hotspot on a mask. The method adopts a metrology management system based on DBM (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2bf9241ec6491a44498e4f42b85b905
https://doi.org/10.1117/12.846720
https://doi.org/10.1117/12.846720
Autor:
Hiroaki Mito, Katsuya Hayano, Tatsuya Maeda, Hiroshi Mohri, Hidetoshi Sato, Ryoichi Matsuoka, Shigeki Sukegawa
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9043b8bb9492c8d768e206bfd98853e3
https://doi.org/10.1117/12.834229
https://doi.org/10.1117/12.834229
Publikováno v:
SPIE Proceedings.
We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02fad821f00331bbdb5a27fa2438923f
https://doi.org/10.1117/12.816108
https://doi.org/10.1117/12.816108
Autor:
Makoto Nishihara, Tatsuya Maeda, Hiroshi Mohri, Ryoichi Matsuoka, Hideo Sakai, Shigeki Sukegawa, Hiodetoshi Sato, Kawashima Satoshi, Katsuya Hayano
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
OPC (Optical Proximity Correction) technique is getting more complicated towards 32 nm technology node and beyond, i.e. from moderate OPC to aggressive OPC. Also, various types of phase shift mask have been introduced, and their manufacturing process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71f937c98ac6319b552e1e0805f16ad7
https://doi.org/10.1117/12.813916
https://doi.org/10.1117/12.813916
Autor:
John L. Sturtevant, Ir Kusnadi, Ryoichi Matsuoka, Hitoshi Komuro, Hiroyuki Shindo, Jeroen Van de Kerkhove, Yutaka Hojo, Germain Fenger, Akiyuki Sugiyama, Thuy Do, Peter De Bisschop
Publikováno v:
SPIE Proceedings.
We developed a new contouring technology that executes contour re-alignment based on a matching of the measured contour with the design data. By this 'secondary' pattern matching (the 'primary' being the pattern recognitions that is done by the SEM d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0b1161109ff427ffa9269457fdaa2f
https://doi.org/10.1117/12.814430
https://doi.org/10.1117/12.814430
Publikováno v:
Photomask Technology 2008.
We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d756d3e56eb2c2bdf016d6465d4c9f64
https://doi.org/10.1117/12.802137
https://doi.org/10.1117/12.802137