Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Ryoichi Inoue"'
Publikováno v:
BMJ case reports. 15(11)
Publikováno v:
BMJ Case Reports; Mar2024, Vol. 17 Issue 3, p1-6, 6p
Publikováno v:
Tuesday, April 25.
Publikováno v:
Wednesday, April 26.
Publikováno v:
ACS Applied Electronic Materials. 1(6):936-944
We investigated semiconductor direct wafer bonding in a regular, non-cleanroom environment to understand environmental influences on bonding characteristics. The correlations among surface treatments, particle densities, bonding strengths, and interf
Publikováno v:
Nanomaterials
A new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. The fabrication scheme provides simultaneous bond formation and interfacial function generation, leading to efficient dev
Publikováno v:
Advanced Materials Interfaces. 6(22)
Semiconductor bonding mediated by a transparent conductive oxide, ZnO, prepared by a simple solution spin-on process, is presented. The ZnO synthesis, sintering, and bonding processes are realized in a single step, thus providing a highly efficient s
Autor:
Yuki Okamoto, Kayoko Shiraiwa, Hirokazu Murayama, Katsuyuki Madoba, Shin Murata, Teppei Abiko, Kunihiko Anami, Ryoichi Inoue, Jun Horie, Takahiro Sawada, Yuki Hayashi
Publikováno v:
Japanese Journal of Health Promotion and Physical Therapy. 7:13-17
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Wavelength-conversion material-mediated semiconductor wafer bonding has been demonstrated, by utilizing an adhesive and viscous organic matrix embedding fluorescent particles. The wavelength-converting heterointerface can practically lead the spectra
Autor:
Ryoichi Inoue, Katsuaki Tanabe
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Direct-bonded ohmic InP / Si heterostructures are realized for the fabrication of lattice-mismatched multijunction solar cells and replacement of compound semiconductor substrates with silicon substrates. We have examined the dependence of electrical