Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Ryoichi Hirano"'
Publikováno v:
Applied Surface Science. 384:244-250
The effects of the presence of a native oxide film or surface contamination as well as variations in material density on the total electron yield (TEY) of Ru and B 4 C were assessed in the absence of any surface charging effect. The experimental resu
Autor:
Kenji Terao, Hidehiro Watanabe, Masahiro Hatakeyama, Tsuyoshi Amano, Ryoichi Hirano, Takeshi Murakami, Susumu Iida, Kenichi Suematsu
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is a promising technique for 1X nm half-pitch (hp) generation lithography. The inspection of patterned EUVL masks is one of the main issues that must be addressed during mask fabrication for manufacture of devic
Publikováno v:
SPIE Proceedings.
The impact of EUV mask surface conditions on the patterned mask inspection process was investigated. The results of simulations show that the defect detection capability is degraded by the formation of a native oxide film on the surface of a Ru cappe
Autor:
Hidehiro Watanabe, Yasutaka Morikawa, Tsukasa Abe, Ryoichi Hirano, Tsuyoshi Amano, Susumu Iida
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
In Extreme Ultraviolet (EUV) lithography, to enhance the wafer printing performance, a black border surrounding the patterned EUV mask is suggested. In this study, influence of the black border formed on the EUV mask on the image quality captured by
Autor:
Kenichi Suematsu, Masahiro Hatakeyama, Hidehiro Watanabe, Tsuyoshi Amano, Susumu Iida, Kenji Terao, Takeshi Murakami, Ryoichi Hirano
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 (“Model EBEYE” is an EBARA’s model code) , and the resulting system shows promise for application to half-pitch (hp) 16-
Publikováno v:
SPIE Proceedings.
A learning system has been exploited for the mask inspection tool with the Projection Electron Microscope (PEM). The defect is identified by the PEM system using the "defectivity". The detection capability for hp11nm EUV masks is demonstrated. The le
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
Patterned mask inspection for an etched multilayer (ML) EUV mask was investigated. In order to optimize the mask structure from the standpoint of not only a pattern inspection by using a projection electron microscope (PEM), but also by considering t
Autor:
Kenji Terao, Hidehiro Watanabe, Susumu Iida, Ryoichi Hirano, Masahiro Hatakeyama, Tsuyoshi Amano, Takeshi Murakami, Kenichi Suematsu, Shoji Yoshikawa
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrat
Autor:
Shoji Yoshikawa, Tsuyoshi Amano, Kenji Terao, Masahiro Hatakeyama, Ryoichi Hirano, Kenichi Karimata, Takeshi Murakami, Susumu Iida, Hidehiro Watanabe
Publikováno v:
SPIE Proceedings.
EUVL patterned mask defect detection is one of the major issues to realize device fabrication with EUV lithography. 1-6 We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system
Publikováno v:
SPIE Proceedings.
Defect detectability using electron beam (EB) inspection for extreme ultraviolet (EUV) mask was investigated by comparing a projection electron microscope (PEM) and a scanning electron microscope (SEM) inspection system. The detectability with EB doe