Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ryohei Takaki"'
Publikováno v:
Journal of Lightwave Technology. 38:3701-3709
Terahertz (THz) waveguide Bragg grating is experimentally demonstrated on the basis of a mechanical assembly that includes a metal-grating sheet and a metal parallel-plate waveguide (PPWG). Bragg frequency waves, which are also called phase-matching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0aa547931f7edf47774a6f12f48666
https://doi.org/10.1109/jlt.2020.2973247
https://doi.org/10.1109/jlt.2020.2973247
Publikováno v:
JSAP-OSA Joint Symposia 2017 Abstracts.
Terahertz (THz) plasmonic devices typically consist of metallic structures with micrometer- or subwavelength-scaled units, and lead to excellent optical properties, such as the field confinement and enhancement [1]. Such unique performances are attra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee0bc57b8d5c8c50de913d991ca0b949
https://doi.org/10.1364/jsap.2017.7a_a409_3
https://doi.org/10.1364/jsap.2017.7a_a409_3
Publikováno v:
IEICE Transactions on Electronics. :1042-1046
This investigation of the temperature and illumination effects on the AlGaN/GaN HFET threshold voltage shows that it shifts about -1 V under incandescent lamp or blue LED illumination, while almost no shift takes place under red LED illumination. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be593e6c3a029e06f628684f0b5d4eb
https://doi.org/10.1093/ietele/e89-c.7.1042
https://doi.org/10.1093/ietele/e89-c.7.1042
Autor:
Masahiro Kimura, Shunsuke Kawano, Ryohei Takaki, Kenji Yamashita, Kenji Morioka, Daisuke Sato, Suguru Nohda, Hisao Sato, Tomoya Sugahara, Hong Xing Wang, Takashi Mizobuchi, Akihiko Dempo, Shiro Sakai, Naoki Wada, Tetsuya Tanahashi
Publikováno v:
physica status solidi (a). 200:102-105
High performance LEDs emitting in the wavelength range 360–380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1a78aff862ef1feb96482397bac0a8
https://doi.org/10.1002/pssa.200303478
https://doi.org/10.1002/pssa.200303478
Publikováno v:
physica status solidi (a). 200:87-90
We have studied a new method of increasing the extraction efficiency of a GaN-based light-emitting diode (LED) using a plasma surface treatment. In this method, prior to the evaporation of a semitransparent p-metal, the surface of a p-GaN located ben
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee683d5a92cb9f74d6d000a3f1328a2
https://doi.org/10.1002/pssa.200303253
https://doi.org/10.1002/pssa.200303253
Publikováno v:
physica status solidi (a). 207:1386-1388
InGaN/GaN-based light emitting diodes (LEDs) can be grown by using metal organic chemical vapor deposition (MOCVD) to make eight, 3-inch diameter wafers with a thin, tapered reactor cell at atmospheric pressure. The reactor configuration was optimize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edef552ac0840b92b96d25d7f7382b0c
https://doi.org/10.1002/pssa.200983434
https://doi.org/10.1002/pssa.200983434
Publikováno v:
Japanese Journal of Applied Physics. 44:2479
The gate leakage reduction mechanism of AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructure field-effect transistors (HFETs) is investigated and compared with those of three types of HFET, namely; a conventional HFET, a standard MIS-HFET an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7363000fb0bee1604f86c681cf442d88
https://doi.org/10.1143/jjap.44.2479
https://doi.org/10.1143/jjap.44.2479
Autor:
Hisao Sato, Hong-Xing Wang, Daisuke Sato, Ryohei Takaki, Naoki Wada, Tetsuya Tanahashi, Kenji Yamashita, Shunsuke Kawano, Takashi Mizobuchi, Akihiko Dempo, Kenji Morioka, Masahiro Kimura, Suguru Nohda, Tomoya Sugahara, Shiro Sakai
Publikováno v:
Physica Status Solidi (A); Nov2003, Vol. 200 Issue 1, p102-105, 4p