Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ryohei Kitao"'
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
We investigated the behavior of an alloying element in Cu alloy interconnects using CuAl seed from viewpoints of diffusion and reaction of aluminum. We attempted to make different type of CuAl alloy state by controlling heat treatment conditions. The
Autor:
M. Tagami, A. Nakajima, N. Furutake, Naoya Inoue, Yoshihiro Hayashi, Ryohei Kitao, A. Tanabe, T. Onodera, Shuichi Saito, T. Fukai, Makoto Ueki, M. Sekine, Kenichiro Hijioka, Fuminori Ito, K. Fujii, Hirokazu Nagase, Koji Arita, M. Asada, M. Ikeda, E. Nakazawa, I. Kume, Tsuneo Takeuchi, H. Yamamoto, J. Kawahara, Motoyama Koichi
Publikováno v:
2008 IEEE International Electron Devices Meeting.
To enhance RF performance, low-k/Cu dual-damascene (DD) contact is implemented into 40 nm-node CMOS devices for the first time. The Cu DD contact in reliable double-layered low-k films of silica-carbon composite (SCC, k=3.1) and SiOCH (k=3.1) boosts