Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ryohei Gejo"'
Autor:
Yusuke Kobayashi, Tatsuya Nishiwaki, Akihiro Goryu, Tsuyoshi Kachi, Ryohei Gejo, Hiro Gangi, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee420a6dae969d8925ea5c78c499481c
https://doi.org/10.1109/ispsd49238.2022.9813642
https://doi.org/10.1109/ispsd49238.2022.9813642
Autor:
Ryohei Gejo, Tatsunori Sakano, Akiyo Kawakami, Takahiro Kato, Shigeaki Hayase, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0954b909404f77daa1987c1bb87f42c
https://doi.org/10.1109/ispsd49238.2022.9813647
https://doi.org/10.1109/ispsd49238.2022.9813647
Autor:
Tatsunori Sakano, Kento Adachi, Tomoaki Inokuchi, Kazuto Takao, Yoko Iwakaji, Ryohei Gejo, Tomoko Matsudai
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd2b34366e34e3614708fa7c405184e
https://doi.org/10.1109/ispsd49238.2022.9813666
https://doi.org/10.1109/ispsd49238.2022.9813666
Autor:
Yusuke Kobayashi, Tatsuya Nishiwaki, Akihiro Goryu, Tsuyoshi Kachi, Ryohei Gejo, Hiro Gangi, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1047
Reducing the reverse recovery charge (Q rr) is effective for reducing switching loss in field plate (FP)-MOSFETs. A lifetime killer is utilized to reduce Q rr while increasing the leakage current in the off-state. Device simulation shows that a local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d935e684d9f4e1351b7045f0d73dde2
https://doi.org/10.35848/1347-4065/ac40ac
https://doi.org/10.35848/1347-4065/ac40ac
Autor:
Tsuneo Ogura, Yosuke Maeda, Yuma Matsuoka, Norio Yasuhara, Shinichiro Misu, Ryohei Gejo, Kazutoshi Nakamura
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A novel trench diode for Reverse Conducting (RC) IGBTs is proposed. A Schottky Controlled injection (SC) concept is applied to the diode area of the RC-IGBT. The reverse recovery loss is reduced drastically by suppressing carrier injection from P+/P-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abbcecebbad3142299cca77b8b8cac97
https://doi.org/10.1109/ispsd.2016.7520801
https://doi.org/10.1109/ispsd.2016.7520801
Autor:
Ryohei Gejo, Mamoru Imade, Masashi Yoshimura, Masaki Tanpo, Hidekazu Umeda, Takatomo Sasaki, Fumio Kawamura, Yasuo Kitaoka, Yusuke Mori, Naoya Miyoshi, Masanori Morishita
Publikováno v:
Materials Science Forum. :1245-1250
We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c5d4110df45354236d367b95d04682
https://doi.org/10.4028/www.scientific.net/msf.600-603.1245
https://doi.org/10.4028/www.scientific.net/msf.600-603.1245
Autor:
D. Kashiwagi, T. Sasaki, Ryohei Gejo, Yoshihiro Kangawa, Lijun Liu, Fumio Kawamura, Koichi Kakimoto, Yusuke Mori
Publikováno v:
Journal of Crystal Growth. 310:1790-1793
The solution growth technique is one of the key methods for fabricating gallium nitride (GaN) wafers with small dislocation density. Since the growth rate of GaN using the solution technique is small, the key issue of the technique is to enhance the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89aa104831feceed7eb86b9dd7d239bf
https://doi.org/10.1016/j.jcrysgro.2007.10.061
https://doi.org/10.1016/j.jcrysgro.2007.10.061
Autor:
Ryohei Gejo, Fumio Kawamura, Yasuo Kitaoka, Yusuke Mori, Minoru Kawahara, Masashi Yoshimura, Takatomo Sasaki
Publikováno v:
Japanese Journal of Applied Physics. 46:7689-7692
In the liquid phase epitaxy (LPE) growth of GaN single crystals using the Na flux method, we achieved an increase in the growth rate and a change in the growth thickness distribution by generating thermal convection in the Ga–Na melt. The effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b554073b8f2f17a61dec89e224b3691
https://doi.org/10.1143/jjap.46.7689
https://doi.org/10.1143/jjap.46.7689
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A novel 1200 V Insulated Gate Bipolar Transistor (IGBT) for high-speed switching that combines Shorted Dummy-cell (SD) to control carrier extraction at the emitter side and P/P - collector to reduce hole injection from the backside is proposed. The S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f8dd4740a5e1e1d2b705ceb7d7f61bc
https://doi.org/10.1109/ispsd.2014.6855985
https://doi.org/10.1109/ispsd.2014.6855985