Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ryohei Baba"'
Publikováno v:
Chemical Engineering Transactions, Vol 108 (2024)
Catalytic reactors that convert carbon dioxide into methanol are one of the key technologies in carbon recycling. Various numerical simulations have been conducted to study catalytic reactors, including multi-step chemical reactions, flow, reaction h
Externí odkaz:
https://doaj.org/article/05dbd4b044e84470941e9732ef863981
Publikováno v:
The Proceedings of The Computational Mechanics Conference. :2-15
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 130:924-928
Autor:
Yoshimichi Izawa, Akio Iwabuchi, Nobuo Kaneko, Masataka Yanagihara, Shinichi Iwakami, Osamu Machida, Toshihiro Ehara, Hirokazu Goto, Ryohei Baba
Publikováno v:
Japanese Journal of Applied Physics. 46:L721-L723
A new device of high-power AlGaN/GaN heterostructure field-effect transistors (HFETs) fabricated on a Si substrate is proposed. Its application of the power factor correction (PFC) circuit is presented for the first time. The AlGaN/GaN HFETs fabricat
Publikováno v:
GCCE
We propose a frame layout determination method for an automatic comic generation system. Most previous work applied simple frame layouts or did not consider user preferences. In this work, we divide frame-layout types into four patterns and introduce
Autor:
Osamu Machida, Akio Iwabuchi, Nobuo Kaneko, Masataka Yanagihara, Hirokazu Goto, Ryohei Baba, Shinichi Iwakami
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
The normally-off AlGaN/GaN HFETs on Si substrate were fabricated. To realize normally-off characteristic, recess was formed under the gate electrode and NiOx was formed as a gate electrode. As a result, the fabricated AlGaN/GaN HFET with a gate width