Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Ryo Yokogawa"'
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115225-115225-10 (2021)
Using molecular dynamics, the effect of an atomic mass difference on a localized phonon mode in SiGe alloys was investigated. Phonon dispersion relations revealed that a change in atomic mass causes the optical and acoustic modes to shift frequency.
Externí odkaz:
https://doaj.org/article/a8366e761b2d4418838e2340d6880597
Autor:
Sylvia Yuk Yee Chung, Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, Takanobu Watanabe
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075017-075017-7 (2021)
Using molecular dynamics, we found that the localized phonon-mode spectrum in SiGe alloys, which was recently discovered by an inelastic x-ray scattering experiment, changes according to the size distribution of compositional clusters in alloys. By v
Externí odkaz:
https://doaj.org/article/7851e87b10ea402aaf1dbd4a05fb21e1
Autor:
Tianzhuo Zhan, Ryo Yamato, Shuichiro Hashimoto, Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Kohei Mesaki, Hiroki Takezawa, Ryo Yokogawa, Yibin Xu, Takashi Matsukawa, Atsushi Ogura, Yoshinari Kamakura, Takanobu Watanabe
Publikováno v:
Science and Technology of Advanced Materials, Vol 19, Iss 1, Pp 443-453 (2018)
For harvesting energy from waste heat, the power generation densities and fabrication costs of thermoelectric generators (TEGs) are considered more important than their conversion efficiency because waste heat energy is essentially obtained free of c
Externí odkaz:
https://doaj.org/article/82bebbbf334c452c9dd082b64493f0ca
Autor:
John Borland, Shota Komago, Ryo Yokogawa, Kazutoshi Yoshioka, Naomi Sawamoto, Atsushi Ogura, Gary Goodman, Temel Buyuklimanli
Publikováno v:
MRS Advances. 7:1380-1389
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da81cee8b988b9e311b877776230dccb
https://doi.org/10.1557/s43580-023-00510-8
https://doi.org/10.1557/s43580-023-00510-8
Autor:
Ryo Yokogawa, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi, Atsushi Ogura
Publikováno v:
ECS Transactions. 109:351-357
1. Background and purpose Strain techniques are one of the principal technology boosters for the realization of high-performance logic devices composed of group IV semiconductors such as Si, Ge and their alloy. Recently, it is gradually difficult to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2de6285c9db12553315aa6d8790c1f16
https://doi.org/10.1149/10904.0351ecst
https://doi.org/10.1149/10904.0351ecst
Publikováno v:
Journal of Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b84f4b4744006fc0885b0484cdf6fc7
https://doi.org/10.1007/s11664-023-10502-x
https://doi.org/10.1007/s11664-023-10502-x
Publikováno v:
Journal of Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc661c41b2d2e2bf59a9d91ddbdd7e5b
https://doi.org/10.1007/s11664-023-10497-5
https://doi.org/10.1007/s11664-023-10497-5
Autor:
Tianzhuo Zhan, Keita Sahara, Haruki Takeuchi, Ryo Yokogawa, Kaito Oda, Zhicheng Jin, Shikang Deng, Motohiro Tomita, Yen-Ju Wu, Yibin Xu, Takeo Matsuki, Haidong Wang, Mengjie Song, Sujun Guan, Atsushi Ogura, Takanobu Watanabe
Publikováno v:
ACS Applied Materials & Interfaces. 14:7392-7404
Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af0db863d4b07f1db57928fa74d7529f
https://doi.org/10.1021/acsami.1c20366
https://doi.org/10.1021/acsami.1c20366
Publikováno v:
CrystEngComm. 24:8294-8302
The effect of various carboxylic acids on non-seed-CBD fabricated ZnO films and their optical and electrical properties were investigated and discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a6f2dd53ab00332bde8dfc577da1059
https://doi.org/10.1039/d2ce01136k
https://doi.org/10.1039/d2ce01136k
Autor:
Kazutoshi Yoshioka, Kohei Suda, Gai Ogasawara, Atsushi Ogura, Yuki Takahashi, Ryo Yokogawa, Ichiro Hirosawa
Publikováno v:
ECS Transactions. 98:481-490
Ge1-x Sn x is expected to be a new material for next-generation electronic and thermoelectric device because it has higher carrier mobilities and lower thermal conductivity than pure Si and Ge. Here, strain is an important factor for designing electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff5818e03d63ccc9523aa4237e97086e
https://doi.org/10.1149/09805.0481ecst
https://doi.org/10.1149/09805.0481ecst