Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Ryo Ohkubo"'
Autor:
Akiko Hanai, Keisuke Yorimoto, Ryo Ohkubo, Tadashi Tsukamoto, Katsuhiro Mizuno, Yuji Takahashi
Publikováno v:
Neurology and Clinical Neuroscience. 11:32-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf2997423bbd3524430b49e52eb7e5a
https://doi.org/10.1111/ncn3.12688
https://doi.org/10.1111/ncn3.12688
Publikováno v:
Journal of Clinical Case Reports and Studies. 2:01-09
Background: An infected aortic aneurysm (IAA) is a rare and life-threatening disease. The aim of this study is to elucidate mid-term outcomes of IAA, incorporating patch angioplasty with bovine pericardium. Materials and Methods: Between June 2011 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f63dac21250ef6c288a89044b6f5c42a
https://doi.org/10.31579/2690-8808/064
https://doi.org/10.31579/2690-8808/064
Publikováno v:
Photomask Technology 2021.
Extreme ultraviolet lithography (EUVL) is a main lithographic technology for cutting-edge node. Also, ArF lithography will continue to be used in conjunction with EUVL for advanced node production. Critical ArF imaging layers require photomasks with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ca3f3144f6792459a0cf25ef87afd3
https://doi.org/10.1117/12.2600852
https://doi.org/10.1117/12.2600852
Autor:
Hiroaki Shishido, Hiromatsu Takahiro, Masahiro Hashimoto, Hitoshi Maeda, Ryo Ohkubo, Toru Fukui, Kazunori Ono
Publikováno v:
35th European Mask and Lithography Conference (EMLC 2019).
This paper shows the latest challenges facing mask blank evolution to support leading-edge lithography processes. ArF immersion lithography has been employing multi-pass exposures to exceed the physical diffraction limit. These photomasks demand very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b890bd2d40b4a536825c18022d3a9003
https://doi.org/10.1117/12.2534910
https://doi.org/10.1117/12.2534910
Autor:
Takahiro Hiromatsu, Ryo Ohkubo, Hitoshi Maeda, Toru Fukui, Hiroaki Shishido, Kazunori Ono, Masahiro Hashimoto
Publikováno v:
Proceedings of SPIE; 8/28/2019, Vol. 11177, p1-8, 8p
Publikováno v:
Digitally Archiving Cultural Objects ISBN: 9780387758060
We present a new registration method that automatically and simultaneously aligns multiple 2D images onto a 3D model. Correspondences between 2D edge pixels and 3D edge points are automatically searched and updated. Besides these 2D-3D edge correspon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b90d42d131d0f08178e7a0cd7eae1784
https://doi.org/10.1007/978-0-387-75807_13
https://doi.org/10.1007/978-0-387-75807_13
Autor:
Tsukasa Abe, Ryo Ohkubo, Hiroshi Mohri, Shiho Sasaki, Masao Ushida, Takeyuki Yamada, Naoya Hayashi, Akiko Fujii, Osamu Nozawa, Tsutomu Shoki
Publikováno v:
SPIE Proceedings.
Absorber layer patterning process for low reflectivity tantalum boron nitride (LR-TaBN) absorber layer and chromium nitride (CrN) buffer layer were improved to satisfy high resolution pattern and high level critical dimension (CD) control. To make 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::885606db65633d4b33891c6ea06dd834
https://doi.org/10.1117/12.692519
https://doi.org/10.1117/12.692519
Autor:
Ryo Ohkubo, Osamu Nagarekawa, Morio Hosoya, Hideo Kobayashi, Mitsuhiro Kureishi, Yoh-ichi Usui, Osamu Nozawa, Tsutomu Shoki, Noriyuki Sakaya
Publikováno v:
SPIE Proceedings.
Low damage processes for an EUV mask consisting of an LR-TaBN absorber and a thin CrN buffer layer with a thickness of 10-nm have been successfully demonstrated through a dry etching process with high selectivity for the absorber, AFM and EB repair p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fccd441862579ddd03781c155b68f04f
https://doi.org/10.1117/12.598613
https://doi.org/10.1117/12.598613
Autor:
Youichi Usui, Osamu Nagarekawa, Ryo Ohkubo, Morio Hosoya, Hideo Kobayashi, Takeru Kinoshita, Tsutomu Shoki, Noriyuki Sakaya
Publikováno v:
SPIE Proceedings.
Programmed phase defects, at desirably specified sizes and known locations, for EUV multilayer blanks were successfully fabricated by the following newly developed simple technique; depositing Cr film on a 6025 glass substrate or a Si wafer, generati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cb34d62cb9a3fc44b3444eddb945d9
https://doi.org/10.1117/12.517836
https://doi.org/10.1117/12.517836
Autor:
Osamu Nagarekawa, Youichi Usui, Tsutomu Shoki, Ryo Ohkubo, Hideo Kobayashi, Takeru Kinoshita, Shinichi Ishibashi, Morio Hosoya
Publikováno v:
SPIE Proceedings.
6-inch EUV masks consisting of Mo/Si multilayers and patterned CrX buffer and TaBN absorber layers have recently been developed and evaluated. Mo/Si multilayers with a relatively high EUV reflectivity of 66 percent and an excellent uniformity were ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f3118416917fe60298be89395ae279
https://doi.org/10.1117/12.477007
https://doi.org/10.1117/12.477007