Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ryo Ikuta"'
Autor:
Quang Duy Trinh, Kazuhide Takada, Ngan Thi Kim Pham, Chika Takano, Takahiro Namiki, Ryo Ikuta, Shingo Hayashida, Shoko Okitsu, Hiroshi Ushijima, Shihoko Komine-Aizawa, Satoshi Hayakawa
Publikováno v:
Frontiers in Microbiology, Vol 13 (2022)
Rubella virus (RuV) infections in pregnant women, especially first-trimester infections, can lead to congenital rubella syndrome (CRS). However, the mechanisms of fetal RuV infection are not completely understood, and it is not observed in every preg
Externí odkaz:
https://doaj.org/article/55963fd2fc154cd49d47ec6adfe97c4e
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 82, Iss 834, Pp 15-00095-15-00095 (2016)
The aim of this research is to investigate the operator's motor skill obtained by the skill training during the human-robot cooperative task. There are many studies to investigate the perception of the motion of the robot and the electromyography (EM
Externí odkaz:
https://doaj.org/article/b71de38f9f1640abaa28a695af1a9762
Publikováno v:
Journal of Nihon University Medical Association. 81:305-307
Autor:
Shihoko Komine-Aizawa, Yoshiyasu Hirata, Noriko Kato, Sayu Omori, Hiroyuki Hao, Quang Duy Trinh, Mikiko Sato, Atsushi Komatsu, Nobuhiko Nagano, Kazuhide Takada, Ryo Ikuta
Publikováno v:
Placenta
Publikováno v:
Journal of The Electrochemical Society. 166:D3058-D3065
The suppression behavior of copper electrodeposition by additives was studied using a microfluidic device. Strong suppression and its cessation due to additive adsorption and deactivation on the plating surface is believed to be crucial for copper bo
Publikováno v:
Transactions of the JSME (in Japanese). 82:15-00095
Publikováno v:
ECS Meeting Abstracts. :1122-1122
Filling copper into TSVs (Through Silicon Via) is achieved by copper electroplating in an acid copper sulfate bath with combination of several additives. The additives are generally classified into accelerator, suppressor or leveler. It is assumed th
Publikováno v:
ECS Meeting Abstracts. :1255-1255
Nowadays, high performance of integrated circuits is owing three-dimensional packaging technologies and TSV (through silicon via) came into use in commercial products. TSV is formed by bottom-up filling of conductor in the deep hole and copper electr
Publikováno v:
Thin Solid Films. 516:4441-4445
Amorphous hydrogenated carbon nitride (a-CN x :H) films were prepared on Si and glass (SiO 2 ) substrates using i-C 4 H 10 /N 2 supermagnetron plasma chemical vapor deposition. By controlling the rf power ratio (i.e., keeping the upper electrode rf p
Publikováno v:
Thin Solid Films. 515:4121-4124
By using a sputter-assisted chemical vapor deposition (CVD) of supermagnetron plasma, amorphous CN x :H films were deposited on the lower part of two parallel electrodes. By applying rf power to the upper electrode (UPRF) at 5 W to 800 W, polymer-lik