Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Ryo Hattori"'
Publikováno v:
Materials Science Forum. 963:259-262
Phase contrast microscopy (PCM) technique was demonstrated as the effective non-destructive discrimination method of TSDs and TEDs in 4H-SiC epitaxial layers in comparison with conventional polarized light microscopy, PL topography, KOH etch pit insp
Publikováno v:
The Japanese Journal of Rehabilitation Medicine. 56:213-217
Publikováno v:
ICM
We initially proposed a virtual hug as an imaginary hug experience of two users over distance with a visual presentation of their synthesized hugging image. Since the image was synthesized to provide a mirror image of a hug, we call the visual presen
Publikováno v:
Joho Chishiki Gakkaishi. 28:223-252
Publikováno v:
The Proceedings of Conference of Chugoku-Shikoku Branch. :10d1
Publikováno v:
IEICE Communications Express. 4:26-30
Autor:
Koji, Hashimoto, Kei, Miyamoto, Takashi, Yanagawa, Ryo, Hattori, Takaaki, Aoki, Toshio, Matsuoka, Takatoshi, Ohno, Katsuji, Shimizu
Publikováno v:
Journal of Sports Science and Medicine, Vol 12, Iss 1, Pp 80-87 (2013)
Swinging a golf club includes the rotation and extension of the lumbar spine. Golf-related low back pain has been associated with degeneration of the lumbar facet and intervertebral discs, and with spondylolysis. Reflective markers were placed direct
Publikováno v:
Journal of Plastic Surgery and Hand Surgery. 47:46-49
Reconstruction of the through-and-through defects of the oral cavity, involving oral mucosa, bone, and external skin is a major challenge. A single fibula osteocutaneous flap providing two skin islands is an option for such composite reconstruction.
Publikováno v:
Applied Physics Express. 11:075501
The superior nondestructive distinguishability of threading screw dislocations and threading edge dislocations in SiC epitaxial layers by phase-contrast microscopy using our optical system was demonstrated by comparing our experimental results with t
Publikováno v:
Materials Science Forum. :129-132
Two types of in-grown stacking faults in 4H-SiC epitaxial layers (SFs) were investigated using a new photoluminescence (PL) topographic imaging system, macro/micro PL mapping system, TEM and molten KOH etch pit observation. Shockley type SFs (SSFs) o