Zobrazeno 1 - 10
of 236
pro vyhledávání: '"Rylkov, A. V."'
Publikováno v:
Zh. Exp. Teor. Fiz. 166, 383 (2024)
Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different compositions and atomic percentage of metal and dielectric phases (M = Fe, Co, Ni, CoFeB; D = Al$_2$O$_3$, SiO$_2$, ZrO$_2$; x $\approx$ 15-60 at.%) are investigated by
Externí odkaz:
http://arxiv.org/abs/2406.04799
Autor:
Drovosekov, A. B., Kreines, N. M., Ziganurov, D. A., Sitnikov, A. V., Nikolaev, S. N., Rylkov, V. V.
Publikováno v:
J. Exp. Theor. Phys. 137, 562 (2023)
Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different composition and percentage of metal and dielectric phases (M = Fe, Co, CoFeB; D = Al$_2$O$_3$, SiO$_2$, LiNbO$_3$; x $\approx$ 15-70 at.%) are investigated by magnetic r
Externí odkaz:
http://arxiv.org/abs/2305.00551
Autor:
Yuklyaevskikh, Georgii A., Shvetsov, Boris S., Emelyanov, Andrey V., Kulagin, Vsevolod A., Rylkov, Vladimir V., Demin, Vyacheslav A.
Publikováno v:
In Chaos, Solitons and Fractals: the interdisciplinary journal of Nonlinear Science, and Nonequilibrium and Complex Phenomena January 2025 190
Publikováno v:
Phys. Rev. Applied 17, 054035 (2022)
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of resistive
Externí odkaz:
http://arxiv.org/abs/2111.13763
Autor:
Martyshov, M. N., Emelyanov, A. V., Demin, V. A., Nikiruy, K. E., Minnekhanov, A. A., Nikolaev, S. N., Taldenkov, A. N., Ovcharov, A. V., Presnyakov, M. Yu., Sitnikov, A. V., Vasiliev, A. L., Forsh, P. A., Granovskiy, A. B., Kashkarov, P. K., Kovalchuk, M. V., Rylkov, V. V.
Publikováno v:
Phys. Rev. Applied 14, 034016 (2020)
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure s
Externí odkaz:
http://arxiv.org/abs/1912.03726
Autor:
Drovosekov, A. B., Kreines, N. M., Barkalova, A. S., Nikolaev, S. N., Rylkov, V. V., Sitnikov, A. V.
Publikováno v:
J. Magn. Magn. Mater. 495, 165875 (2020)
Metal-insulator (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$ nanocomposite films with different content of the ferromagnetic (FM) phase $x$ are investigated by ferromagnetic resonance (FMR) technique. A strong change of the FMR line shape is observed in the vici
Externí odkaz:
http://arxiv.org/abs/1906.06320
Autor:
Minnekhanov, Anton A., Emelyanov, Andrey V., Lapkin, Dmitry A., Nikiruy, Kristina E., Shvetsov, Boris S., Nesmelov, Alexander A., Rylkov, Vladimir V., Demin, Vyacheslav A., Erokhin, Victor V.
Publikováno v:
Scientific Reports 9, 10800 (2019)
In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by mea
Externí odkaz:
http://arxiv.org/abs/1901.08667
Akademický článek
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Autor:
Rylkov, V. V., Nikolaev, S. N., Chernoglazov, K. Yu., Demin, V. A., Sitnikov, A. V., Presnyakov, M. Yu., Vasiliev, A. L., Perov, N. S., Vedeneev, A. S., Kalinin, Yu. E., Tugushev, V. V., Granovsky, A. B.
Publikováno v:
Phys. Rev. B 95, 144202 (2017)
We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The s
Externí odkaz:
http://arxiv.org/abs/1611.05195
Autor:
Drovosekov, A. B., Kreines, N. M., Savitsky, A. O., Kapelnitsky, S. V., Rylkov, V. V., Tugushev, V. V., Prutskov, G. V., Novodvorskii, O. A., Shorokhova, A. V., Wang, Y., Zhou, S.
Publikováno v:
J. Magn. Magn. Mater. 429, 305 (2017)
A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 - 300 K using
Externí odkaz:
http://arxiv.org/abs/1510.02634