Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Ryan Ryoung Han Kim"'
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e07d858b4ead55a5928baee325a159
https://doi.org/10.1117/12.2658866
https://doi.org/10.1117/12.2658866
Autor:
Werner Gillijns, Jae-Uk Lee, Ryan Ryoung han Kim, Chih-I Wei, Xima Zhang, Azat Latypov, Germain Fenger, John Sturtevant
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1b4b09fe6a0ae94a8ad5b139fb1242f
https://doi.org/10.1117/12.2658260
https://doi.org/10.1117/12.2658260
Autor:
Ana-Maria Armeanu, Evgeny Malankin, Neal Lafferty, Chih-I Wei, Monica Sears, Germain Fenger, Xima Zhang, Werner Gillijns, Darko Trivkovic, Ryan Ryoung-Han Kim, Jeonghoon Lee
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26bcdac1d8e4e6ad2b2124783443191d
https://doi.org/10.1117/12.2660413
https://doi.org/10.1117/12.2660413
Autor:
Syed Muhammad Yasser Sherazi, Yihan Chang, Youssef Drissi, Bilal Chehab, Jae Uk Lee, Victor Vega Gonzalez, Ryan Ryoung Han Kim
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee9de2f91fdeb7ea2cf5f95ec5e166a
https://doi.org/10.1117/12.2615311
https://doi.org/10.1117/12.2615311
Publikováno v:
Design-Process-Technology Co-optimization XV.
We propose the use of machine learning based analytics to simplify OPC (Optical Proximity Correction) model building process which demands concurrent optimization of more than 70 parameters as nodes shrink. We first built a deep neural network archit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51229652a1542480bc4cff2c6d7c396
https://doi.org/10.1117/12.2584704
https://doi.org/10.1117/12.2584704
Autor:
Eric Hendrickx, Ryan Ryoung han Kim, Lieve Van Look, Rik Jonckheere, Emily Gallagher, Kurt G. Ronse, Vicky Philipsen
Publikováno v:
35th European Mask and Lithography Conference (EMLC 2019).
As it has been widely announced by the leading foundries, and confirmed by ASML, EUV Lithography is being introduced into high volume manufacturing (HVM) since the beginning of this year, in order to enable a more cost-effective manufacturing for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14cab8bdcc8a7f739646f618247394a0
https://doi.org/10.1117/12.2535821
https://doi.org/10.1117/12.2535821
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Advanced technology nodes are demanding aggressive printability using EUV. EUV printing process inherently brings in stochastic defects. To measure and experience various types of Stochastics in EUV printing, high volume measurements are deemed neces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::457fc989c6a2ea2d1ceb911e969e4ecb
https://doi.org/10.1117/12.2515418
https://doi.org/10.1117/12.2515418
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIII.
Self-aligned quadruple patterning (SAQP) is not compatible with every design. It couldn’t pattern even number routing track, for examples 4 internal routing tracks with power rails side by side, due to the process footprint of conventional SAQP. On
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f94d5bd2677451939905ace9d65998b
https://doi.org/10.1117/12.2515216
https://doi.org/10.1117/12.2515216
Autor:
Ryan Ryoung Han Kim, James Word, Werner Gillijns, Jae Uk Lee, Ahmed Hamed-Fatehy, Rehab Kotb, Rajiv Naresh Sejpal, Youssef Drissi, Germain Fenger
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIII
In this work we are introducing a manufacturing flow for the SALELE Process in details. Starting with layout decomposition, where the drawn layer is decomposed into 4 Masks: 2 Metal-like Masks, and 2 Block-like Masks. Then each of these masks is subj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0828d69812289fb20d130c39c7dafed
Autor:
Jeffrey S. Smith, Ryan Ryoung Han Kim, Kathleen Nafus, Christopher J. Wilson, Zsolt Tokei, Lior Huli, Daniele Piumi, Julien Ryckaert, Victor Vega Gonzalez, Julie Bannister, Frederic Lazzarino, Nihar Mohanty, Steven Scheer, Arindam Mallik, Stefan Decoster, Carlos Fonseca, Kathy Barla, Marc Demand, Kaushik A. Kumar, Yannick Feurprier, Philippe Leray, Anton J. deVilliers, Jürgen Boemmels, Vinh Luong
Publikováno v:
Advanced Etch Technology for Nanopatterning VI
In this work, we present and compare two integration approaches to enable self-alignment of the block suitable for the 5- nm technology node. The first approach is exploring the insertion of a spin-on metal-based material to memorize the first block
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd791d66fbe00ef60f94ba7005996aa1