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pro vyhledávání: '"Ryan M. Stein"'
Autor:
Michael Stewart, Ryan M. Stein
Publikováno v:
J Appl Phys
Semiconductor quantum dot (QD) devices experience a modulation of the band structure at the edge of lithographically defined gates due to mechanical strain. This modulation can play a prominent role in the device behavior at low temperatures, where Q
Publikováno v:
Journal of Applied Physics. 130:115102
Gate-defined quantum dots benefit from the use of small grain size metals for gate materials because they aid in shrinking the device dimensions. However, it is not clear what differences arise with respect to process-induced defect densities and inh