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pro vyhledávání: '"Ryan Hsin-Chin Jiang"'
Publikováno v:
2011 IEEE International Conference on IC Design & Technology.
The on-chip Transient Voltage Suppressor (TVS) embedded in the silicon based transceiver IC has been proposed in this paper by using 0.8 μm Bipolar-CMOS-DMOS (BCD) process. The structure of the on-chip TVS is a high voltage Dual Silicon-Controlled-R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85492fb619af968c4cebe1266f22873f
https://doi.org/10.1109/icicdt.2011.5783236
https://doi.org/10.1109/icicdt.2011.5783236
Publikováno v:
IEEE Electron Device Letters; Dec2008, Vol. 29 Issue 12, p1272-1290, 19p