Výsledky vyhledávání - "Ryan Godlewski"

(Invited) Growth of Power-Grade GaN Substrates By the Near Equilibrium Ammonothermal (NEAT) Method and Expansion of the Size to 100 Mm

Autor: Tadao Hashimoto, Edward Letts, Daryl Key, Benjamin Jordan, Ryan Godlewski

Publikováno v: ECS Meeting Abstracts. :1358-1358

[Invited Paper] This paper reviews the growth of power-grade GaN crystals by the near-equilibrium ammonothermal (NEAT) method and reports the evaluation of a 4" bulk GaN crystal. Ammonothermal growth is a proven method of producing low-dislocation, G

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebf19ef681558a0e6dee45a67edb14c7
https://doi.org/10.1149/ma2022-02371358mtgabs

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