Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Ryan G. Banal"'
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117115-117115-6 (2015)
Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination proces
Externí odkaz:
https://doaj.org/article/d5d98263d1cd4d908fe141a7d6b8a761
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097143-097143-8 (2015)
AlN epilayers were grown on (0001) sapphire substrates by metal-organic vapor phase epitaxy, and the influence of the substrate’s surface structure on the formation of in-plane rotation domain is studied. The surface structure is found to change wi
Externí odkaz:
https://doaj.org/article/ef588938475b4d339489d3ed63dfb66a
Publikováno v:
Journal of Physics D: Applied Physics. 55:455102
The natural band alignment of BAlN and BGaN alloys was investigated using the atomic solid-state energy scale approach. The band edge positions relative to the vacuum level were determined for BAlN and BGaN alloys, and the band offset values for each
Publikováno v:
Study of Grain Boundary Character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5db9cc8022a42791b9b28c206b4d9f37
http://www.intechopen.com/articles/show/title/formation-mechanism-and-elimination-of-small-angle-grain-boundary-in-aln-grown-on-0001-sapphire-subs
http://www.intechopen.com/articles/show/title/formation-mechanism-and-elimination-of-small-angle-grain-boundary-in-aln-grown-on-0001-sapphire-subs
Publikováno v:
Nature Photonics. 4:767-770
Researchers demonstrate the generation of deep-ultraviolet light of wavelength ∼240 nm from AlxGa1−xN/AlN quantum wells by electron beam irradiation, with an output power of 100 mW and an efficiency of ∼40%. This record-breaking power is attrib
Autor:
Yuichi Ota, Meiyong Liao, Masaki Takeguchi, Yasuo Koide, Ryan G. Banal, Masataka Imura, Yoshiko Nakayama
Publikováno v:
physica status solidi (a). 215:1800282
Publikováno v:
physica status solidi c. 7:2111-2114
High-quality AlxGa1-xN/AlN multiple quantum wells (MQWs) with high-Al content (x > 0.69) were fabricated by modified migration enhanced epitaxy (MEE), characterized by the repetition of simultaneous supply and alternating supply of group III and grou
Autor:
Hiroyuki Takeda, Tomohiro Yamaguchi, Shunsuke Tsuda, Ke Wang, Takahiro Nagata, Masamitsu Kaneko, Masataka Imura, Keisuke Kobayashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Yasushi Nanishi, Yasuo Koide, Nao Uematsu, Tsutomu Araki, Anli Yang, Ryan G. Banal
Publikováno v:
Journal of Applied Physics. 123:095701
The surface and bulk electronic structures of In0.7Ga0.3N epilayers are investigated by angle-resolved hard X-ray photoelectron spectroscopy (HX-PES) combined with soft X-PES. The unintentionally and Mg-doped In0.7Ga0.3N (u-In0.7Ga0.3N and In0.7Ga0.3
Publikováno v:
physica status solidi (a). 214:1700463
The electrical properties of hydrogen-terminated diamond (H-diamond) metal–insulator–-semiconductor field-effect transistor (MISFET) are improved remarkably using AlN/Al2O3 stack gate. Atomic-layer-deposited Al2O3 (ALD-Al2O3) is formed on H-diamo
Publikováno v:
physica status solidi c. 6:599-602
The surface diffusion of Al adatoms during metalorganic vapor phase epitaxy of AlN was investigated, using sapphire substrates with different mis-orientations. It was found that the diffusion length during modified migration-enhanced epitaxy (MEE) is