Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ryan Cottier"'
Autor:
Barry D. Koehne, Andrei Hernandez-Robles, Leonidas Pantelidis, Daniel Currie, Nikoleta Theodoropoulou, John Miracle, Arturo Ponce, Ryan Cottier
Publikováno v:
Physical Review B. 102
We observe strong spin-orbit interactions in a two-dimensional electron system formed on $\mathrm{SrTi}{\mathrm{O}}_{3}(001)$ films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97bf0b813eb4592a9427ed8cdc1a4c14
https://doi.org/10.1103/physrevb.102.125423
https://doi.org/10.1103/physrevb.102.125423
Autor:
Jon Ellsworth, Donald Lee, Majid Zandian, E. Piquette, Ryan Cottier, Aristo Yulius, Annie Chen, Stephanie Tallaricao, Sheri Douglas, Michael Carmody, Peter Dreiske
Publikováno v:
Infrared Technology and Applications XLVI.
In 2007, Teledyne presented and subsequently published an empirically derived formula, known as “Rule 07”, for the dark current performance of Mercury Cadmium Telluride (HgCdTe) P-on-n diodes. The Rule 07 metric has become widely popular within t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06fbe7bbfb1bdb7c4f9dcc0d40b5a22a
https://doi.org/10.1117/12.2564902
https://doi.org/10.1117/12.2564902
Autor:
Ryan Cottier, Aristo Yulius, James W. Beletic, W. V. McLevige, F. Erdem Arkun, Mark Farris, Eric C. Holland, Majid Zandian, Michael Carmody, Dennis Edwall
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V.
HgCdTe films are grown by molecular beam epitaxy (MBE) on large area CdZnTe substrates to achieve low dark current, high quantum efficiency infrared image sensors with 1.7um and 2.5um cut-off respectively. We present the structural and optical charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4590b1fd500a0941dd09c03c7760255b
https://doi.org/10.1117/12.2304482
https://doi.org/10.1117/12.2304482
Publikováno v:
Applied Physics Letters. 86:223102
We report the preferential nucleation and synthesis of β‐FeSi2 nanostructures at pinned step bunches on the Si(111) surface. The nanostructures are synthesized by depositing Fe on Si at room temperature and subsequent annealing. The surface topogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ed07d26918f05bfae763de84f4bd33
https://doi.org/10.1063/1.1940128
https://doi.org/10.1063/1.1940128